L. Washington

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

R. Rooyackers, Kristin De Meyer, F. Nouri, 2006, IEEE Transactions on Electron Devices.

A systematic study of trade-offs in engineering a locally strained pMOSFET

R. Rooyackers, I. De Wolf, F. Nouri, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

High performance 25 nm FDSOI devices with extremely thin silicon channel

A. Marathe, J. Chan, Z. Krivokapic, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).