M.J. Gadlage

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

B. Narasimham, B.L. Bhuva, D. McMorrow, 2009, IEEE Transactions on Nuclear Science.

Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures

B. Narasimham, V. Ramachandran, B.L. Bhuva, 2010, IEEE Transactions on Device and Materials Reliability.

Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process

B. Narasimham, B.L. Bhuva, P. Gouker, 2009, IEEE Transactions on Nuclear Science.

Laser Verification of Charge Sharing in a 90 nm Bulk CMOS Process

B.L. Bhuva, O.A. Amusan, D. McMorrow, 2009, IEEE Transactions on Nuclear Science.

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

B. Narasimham, V. Ramachandran, B.L. Bhuva, 2009, IEEE Transactions on Nuclear Science.

Effect of Voltage Fluctuations on the Single Event Transient Response of Deep Submicron Digital Circuits

B. Narasimham, B.L. Bhuva, peixiong zhao, 2007, IEEE Transactions on Nuclear Science.

Neutron and alpha particle-induced transients in 90 nm technology

B. Narasimham, B.L. Bhuva, W.T. Holman, 2008, 2008 IEEE International Reliability Physics Symposium.