M. K. Radhakrishnan

Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

Kin Leong Pey, Chih-Hang Tung, W. H. Lin, 2003 .

Physical analysis of Ti-migration in 33 /spl Aring/ gate oxide breakdown

Kin Leong Pey, Chih-Hang Tung, W. H. Lin, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Length Effects on the Reliability of Dual-Damascene Cu Interconnects

Chee Lip Gan, Stefan P. Hau-Riege, Kin Leong Pey, 2002 .

Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

Chee Lip Gan, Kin Leong Pey, Carl V. Thompson, 2001 .

Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

Salvatore Lombardo, Kin Leong Pey, Felix Palumbo, 2003 .

Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

Chih-Hang Tung, W. H. Lin, M. K. Radhakrishnan, 2002 .