Toshihiro Ando

发表

A nondiamond phase at the interface between oriented diamond and Si(100) observed by confocal Raman spectroscopy

Kenji Watanabe, Yoichiro Sato, Kazuo Yamamoto, 1997 .

Electrical properties of Schottky barrier formed on as‐grown and oxidized surface of homoepitaxially grown diamond (001) film

Yoichiro Sato, Hideyo Okushi, Masamori Iida, 1995 .

Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition

Yoichiro Sato, Isao Sakaguchi, Yoichiro Sato, 2001 .

Vapour-phase oxidation of diamond surfaces in O2 studied by diffuse reflectance Fourier-transform infrared and temperture-programmed desorption spectroscopy

Yoichiro Sato, Kazuo Yamamoto, Mutsukazu Kamo, 1993 .

Electronic structures of the diamond/boron-nitride interface

Kazuaki Kobayashi, Kazuo Yamamoto, Isao Sakaguchi, 1998 .

Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties

Isao Sakaguchi, T. Ando, M. Nishitani‐Gamo, 2000 .

Sulfur: A donor dopant for n-type diamond semiconductors

Hajime Haneda, Isao Sakaguchi, T. Ando, 1999 .

Electrical properties of B-doped homoepitaxial diamond (001) film

Junzo Tanaka, Yoichiro Sato, Hideyo Okushi, 1997 .

Covalent immobilization of DNA on diamond and its verification by diffuse reflectance infrared spectroscopy

Yoichiro Sato, Tomoya Machinami, Yoichiro Sato, 2002 .