T. Martin

发表

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

M.J. Uren, M. Kuball, R.J.T. Simms, 2008, IEEE Transactions on Electron Devices.

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

J. Wurfl, M. Kuball, R. Pazirandeh, 2009, IEEE Electron Device Letters.

Insights into electroluminescent emission from AlGaN /GaN field effect transistors using micro-Raman thermal analysis

Martin Kuball, Michael J. Uren, James W Pomeroy, 2006 .

Back Bias Effects in AlGaN/GaN HFETs

Michael J. Uren, B. T. Hughes, T. Martin, 2001 .

Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Martin Kuball, Michael J. Uren, Andrei Sarua, 2003 .

Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography

Martin Kuball, Michael J. Uren, Tim Batten, 2010 .

Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

Martin Kuball, Michael J. Uren, Andrei Sarua, 2010, Semiconductor Science and Technology.

Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Peter J Heard, Martin Kuball, Michael J. Uren, 2005 .

MMIC power amplifier based on AlGaN/GaN HEMTs at 10 GHz

Hermann Schumacher, Helmut Leier, V. Ziegler, 2004 .

Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs

Paul J. Tasker, M. J. Uren, Chris Roff, 2007, 2007 70th ARFTG Microwave Measurement Conference (ARFTG).

Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements

J. Benedikt, P. McGovern, J. Powell, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

Control of Short-Channel Effects in GaN/AlGaN HFETs

J. Benedikt, C. Roff, P. McGovern, 2006, 2006 European Microwave Integrated Circuits Conference.

Thermal management and device failure assessment of high-power AlGaN/GaN HFETs

M. Kuball, J.M. Hayes, M.J. Uren, 2002, 60th DRC. Conference Digest Device Research Conference.

Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

M. Kuball, K. Hilton, T. Martin, 2004, IEEE Electron Device Letters.

Indium Antimonide Based Technology for RF Applications

T. Ashley, L. Buckle, J. Powell, 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

Reliability optimization for wide bandgap devices: Recent developments in high-spatial resolution thermal imaging of GaN devices

M.J. Uren, M. Kuball, T. Martin, 2005, 2005 International Semiconductor Device Research Symposium.

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Hangfeng Ji, K. Hilton, T. Martin, 2006, IEEE Transactions on Electron Devices.

Direct optical measurement of hot-phonons in active AlGaN/GaN devices

Michael J. Uren, James W Pomeroy, Mhh Kuball, 2008 .

Novel InSb-based quantum well transistors for ultra-high speed, low power logic applications

S. Datta, T. Ashley, A.R. Barnes, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

M. Kuball, J. O. Maclean, K. Hilton, 2008, IEEE Electron Device Letters.

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Suman Datta, Martin Trevor Emeny, T. J. Phillips, 2007 .

Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

M. Kuball, J. O. Maclean, K. Hilton, 2007, IEEE Electron Device Letters.

Optimising AIGaN/GaN HFET designs for high efficiency

J. Benedikt, A. Sheikh, C. Roff, 2007, 2007 European Microwave Integrated Circuit Conference.

Integrated Raman - IR Thermography on AlGaN/GaN Transistors

M. Kuball, T. Martin, M. Uren, 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

Characterisation of an experimental gallium nitride microwave Doherty amplifier

J. Lees, J. Benedikt, J. Powell, 2005, 2005 European Microwave Conference.

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Hangfeng Ji, K. Hilton, T. Martin, 2007, IEEE Transactions on Electron Devices.

Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements

J. Benedikt, C. Roff, P. McGovern, 2006, 2006 European Microwave Integrated Circuits Conference.

Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

Martin Kuball, Michael J. Uren, James W Pomeroy, 2009 .

Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band

H. Schumacher, H. Leier, D. Pavlidis, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).