D. Matsubayashi

发表

Properties of c-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process

Y. Okazaki, S. Yamazaki, Kiyoshi Kato, 2016 .

30-nm-channel-length c-axis aligned crystalline In-Ga-Zn-O transistors with low off-state leakage current and steep subthreshold characteristics

Y. Kobayashi, Y. Yamamoto, D. Matsubayashi, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current

D. Matsubayashi, Y. Yakubo, S. Sasagawa, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

S. Yamazaki, D. Matsubayashi, N. Ishihara, 2015 .

Low turn-on voltage due to conduction band lowering effect in crystalline indium gallium zinc oxide transistors

S. Yamazaki, Yoshiyuki Kobayashi, D. Matsubayashi, 2014 .

P.10: WITHDRAWN: P.11: Recognition of Existence of n‐type IGZO Layer in CAAC‐IGZO Film under Source and Drain Electrode Made of Tungsten

S. Yamazaki, S. Mori, M. Tsubuku, 2013 .

Spin splitting and Kondo effect in quantum dots coupled to noncollinear ferromagnetic leads

M. Eto, D. Matsubayashi, 2006, cond-mat/0607548.

Single crystalline In–Ga–Zn oxide films grown from c-axis aligned crystalline materials and their transistor characteristics

Masashi Tsubuku, Shunpei Yamazaki, Yoshinori Yamada, 2014 .

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

Jun Koyama, Shunpei Yamazaki, Takashi Okuda, 2012, IEEE Journal of Solid-State Circuits.

Morphological modification of β-FeSi2 on Si(111) by high temperature growth and post-thermal annealing

Zhi-Quan Liu, H. Tatsuoka, D. Matsubayashi, 2004 .

Electrical characteristics and short-channel effect of c-axis aligned crystal indium gallium zinc oxide transistor with short channel length

Shunpei Yamazaki, Yoshiyuki Kobayashi, Daisuke Matsubayashi, 2014 .

P-11: Channel-Etched CAAC-OS FETs using Multi-layer IGZO

S. Yamazaki, K. Okazaki, D. Matsubayashi, 2015 .

Effect of Surrounded-Channel Structure on Electrical Characteristics of $c$ -Axis Aligned Crystalline In–Ga–Zn–O Field-Effect Transistor

Shunpei Yamazaki, Yoshiyuki Kobayashi, Daisuke Matsubayashi, 2015, IEEE Electron Device Letters.

Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memory

T. Yamamoto, Y. Kobayashi, Y. Yamamoto, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

In silico screening for As/Se-free ovonic threshold switching materials

G. Pourtois, S. Clima, D. Garbin, 2023, npj Computational Materials.

Numerical Study of Current-Induced Domain-Wall Dynamics : Crossover from Spin Transfer to Momentum Transfer(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

M. Ogata, M. Udagawa, D. Matsubayashi, 2008, 0811.3545.