S. Stemmer

Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for ultra-low power logic

S. Datta, K. P. Cheung, H. Liu, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Distributed phase shifter with pyrochlore bismuth zinc niobate thin films

S. Stemmer, R. York, R.A. York, 2006, IEEE Microwave and Wireless Components Letters.

Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy

S. Keller, M. J. W. Rodwell, A. Sivananthan, 2013, 71st Device Research Conference.

Substitutional-Gate MOSFETs With Composite $( \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth

M. J. W. Rodwell, A. C. Gossard, M. Rodwell, 2012, IEEE Electron Device Letters.

Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs

S. Mahapatra, S. Datta, H. Liu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Low-loss, tunable microwave capacitors using bismuth zinc niobate thin films

Jiwei Lu, Jaehoon Park, Jaehoon Park, 2004, 14th IEEE International Symposium on Applications of Ferroelectrics, 2004. ISAF-04. 2004.

Record extrinsic transconductance (2.45 mS/µm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth

M. J. W. Rodwell, A. C. Gossard, B. J. Thibeault, 2013, 2013 Symposium on VLSI Technology.

Record Ion (0.50 mA/µm at VDD = 0.5 V and Ioff = 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs

M. J. W. Rodwell, A. C. Gossard, M. Rodwell, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.