K. M. Yin

Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers

B. Duriez, M. Passlack, C. H. Diaz, 2013, 2013 IEEE International Electron Devices Meeting.

InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

B. Duriez, I. Thayne, M. Passlack, 2013, 2013 IEEE International Electron Devices Meeting.