M. Ray

发表

LOW VOLTAGE ELECTRON EMISSION FROM PB(ZRXTI1-X)O3-BASED THIN FILM CATHODES

D. Temple, G. Mcguire, O. Auciello, 1995 .

A Review of Recent Results on Single Crystal Metastable Semiconducfors: Crystal Growth, Phase Stability, and Physical Properties

L. Romano, S. Barnett, S. Shah, 1984 .

Growth and optical properties of single-crystal metastable (GaAs)1-xGex alloys

P. M. Raccah, S. Barnett, J. Greene, 1982 .

Growth of single crystal GaAs and metastable (GaSb)1−xGexAlloys by sputter deposition: Ion-surface interaction effects

S. Barnett, J. Greene, K. Cadien, 1982 .

Low voltage electron emission from Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/-based thin film cathodes

D. Temple, G. Mcguire, O. Auciello, 1995, IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012).

A multiaperture ion source with adjustable optics to provide well‐collimated, high‐current‐density, low‐ to medium‐energy ion beams

S. Barnett, M. Ray, J. Greene, 1989 .

Esca Studies of the Valence band and Loss Spectra of Semiconductor Films: Ionicity and Chemical Bonding

S. Shah, T. Barr, M. Ray, 1985 .

Cool plasma functionalization of nano-crystalline diamond films

G. Mcguire, O. Shenderova, G. Cunningham, 2007 .

Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing

D. Maher, M. Ray, Bojun Zhang, 1993 .

Cold plasma functionalization of nanodiamond particles

G. Mcguire, O. Shenderova, G. Cunningham, 2006 .

Summary Abstract: A high‐resolution x‐ray photoelectron spectroscopy study of the valence‐band structure of single‐crystal metastable (GaAs)(1−x)(Ge2)x

L. Salvati, G. Tomasch, T. Barr, 1988 .

Selective plasma deposition

G. Mcguire, M. Ray, 1993 .

Quantitative analysis and depth profiling of rare gases in solids by secondary‐ion mass spectrometry: Detection of (CsR)+ molecular ions (R=rare gas)

M. Ray, J. Baker, J. Greene, 1988 .

Growth of high quality epitaxial Ge films on (100)Si by sputter deposition

J. Greene, K. Cadien, M. Ray, 1982 .

Optical Absorption in Single-Crystal Metastable (GaAs) 1-x (Ge 2 ) x Alloys: Evidence for a Zinc-Blende-Diamond Order-Disorder Transition

P. M. Raccah, J. Dow, K. E. Newman, 1983 .

High field emission reproducibility and stability of carbon nanosheets and nanosheet-based backgated triode emission devices

D. Manos, G. Mcguire, O. Shenderova, 2006 .

Back-gated milliampere-class field emission device based on carbon nanosheets

G. Mcguire, O. Shenderova, R. Outlaw, 2006 .

Milliamp-Class, Back-Gated, Triode Field Emission Devices Based on Free-Standing, Two-Dimensional Carbon Nanostructures

G. Mcguire, O. Shenderova, B. Holloway, 2006, 2006 IEEE International Vacuum Electronics Conference held Jointly with 2006 IEEE International Vacuum Electron Sources.

Summary abstract: Growth of metastable Cu1-xCrx solid solutions by ion mixing during deposition

S. Barnett, J. Greene, J. Rigsbee, 1983 .

Studies on Ion Scattering and Sputtering Processes Relevant to Ion Beam Sputter Deposition of Multicomponent Thin Films

A. Kingon, A. Krauss, O. Auciello, 1989 .

Ion Beam Deposited Gmr Materials

D. Temple, J. Lannon, A. Hebard, 2001 .

Thermal‐optical switching of a silicon based interference filter

Eugene A. Irene, Brian H. Augustine, E. Irene, 1994 .

Ion Mixing During Film Deposition: Growth of Metastable Semiconducting and Metallic Alloys

S. Barnett, K. Cadien, J. Rigsbee, 1981 .