Grigory Simin

Jerry L. Hudgins, Grigory Simin, J. Hudgins, 2002, 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289).

NOVEL APPROACHES TO MICROWAVE SWITCHING DEVICES USING NITRIDE TECHNOLOGY

Michael S. Shur, Grigory Simin, Remis Gaska, 2011 .

Current collapse and reliability of III‐N heterostructure field effect transistors

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2007 .

Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

Grigory Simin, Max Shatalov, Vinod Adivarahan, 2002 .

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Grigory Simin, M. Asif Khan, Vinod Adivarahan, 2002 .

Optical bandgap formation in AlInGaN alloys

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2000 .

AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2001 .

Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates

Grigory Simin, Vinod Adivarahan, Jian Ping Zhang, 2002 .

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2000 .

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

R. Mickevicius, Grigory Simin, Michael Shur, 2004 .

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes

Michael S. Shur, Grigory Simin, M. Asif Khan, 2003 .

Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors

Michael S. Shur, Grigory Simin, Remis Gaska, 2001 .

SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

Michael S. Shur, A. Lunev, Grigory Simin, 2000 .

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Hong Wang, Grigory Simin, C. Q. Chen, 2002 .

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Michael S. Shur, Wojciech Knap, Michael E. Levinshtein, 2002 .

Analytical HFET $I$ – $V$ Model in Presence of Current Collapse

Michael S. Shur, P. C. Chao, Alexey Koudymov, 2008 .

Carrier mobility model for GaN

Michael E. Levinshtein, Grigory Simin, S. N. Yurkov, 2003 .

High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells

A. Lunev, Grigory Simin, Michael Shur, 2000 .

Lattice and energy band engineering in AlInGaN/GaN heterostructures

Michael S. Shur, David J. Smith, Grigory Simin, 2000 .

500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits

Grigory Simin, Remis Gaska, J. Deng, 2014 .

III-nitride microwave control devices and ICs

Michael S. Shur, Grigory Simin, Remigijus Gaska, 2013 .

Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

A. Lunev, Grigory Simin, Remis Gaska, 2000 .

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, A. Tarakji, Grigory Simin, 2000 .

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Michael S. Shur, Grigory Simin, M. Asif Khan, 2002 .

Simulation of gate lag and current collapse in gallium nitride field-effect transistors

Michael S. Shur, R. Mickevicius, Grigory Simin, 2004 .

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Michael S. Shur, Michael E. Levinshtein, Grigory Simin, 2000 .

Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs

Michael S. Shur, Asif Khan, Grigory Simin, 2001 .

High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

Grigory Simin, M. Asif Khan, Max Shatalov, 2004 .

Millimeter wave emission from GaN high electron mobility transistor

Michael S. Shur, Xiang Zhang, Jingzhou Xu, 2004 .

Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

Michael S. Shur, Grigory Simin, Sergey L. Rumyantsev, 2003 .