D. Hellin

发表

Total reflection X-ray fluorescence spectrometry for the introduction of novel materials in clean-room production environments

S. De Gendt, J. Rip, S. De Gendt, 2005, IEEE Transactions on Device and Materials Reliability.

Introducing novel metal gate materials for decananometer CMOS in the agile fab: a case study

Wim Deweerd, Tom Schram, Gabriela Catana, 2004 .

Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications: Analysis of the density of nanometer-thin films

Martin L. Green, O. Richard, H. Bender, 2005 .

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

S. Gendt, C. Vinckier, P. Mertens, 2006 .

Saturation effects in TXRF on micro-droplet residue samples

S. Gendt, C. Vinckier, W. Fyen, 2004 .

Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch-total reflection X-ray fluorescence spectrometry

T. Bearda, S. Gendt, C. Vinckier, 2003 .

Introduction of High-k Materials into Wet Processing, Analysis and Behavior

M. Heyns, S. De Gendt, A. Maes, 2003 .

Germanium Deep-Submicron p -FET and n -FET Devices, Fabricated on Germanium-On-Insulator Substrates

K. Opsomer, B. Kaczer, A. Satta, 2007 .

Wonderful new materials or yield killers? New metrics for metal contamination assessment

T. Bearda, D. Hellin, G. Catana, 2006, 2006 IEEE International Symposium on Semiconductor Manufacturing.

Interplay of plasma etch, strip and wet clean in patterning La 2 O 3 /HfO 2 -containing high-κ/metal gate stacks

W. Boullart, D. Hellin, J. Vertommen, 2011 .

Validation of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers

S. Gendt, C. Vinckier, P. Mertens, 2004 .

H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface

G. Pourtois, M. Caymax, M. Heyns, 2007 .

Vapor phase decomposition-droplet collection-total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

S. Gendt, C. Vinckier, I. Teerlinck, 2005 .

Remediation for TXRF saturation effects on microdroplet residues from preconcentration methods on semiconductor wafers

T. Conard, S. Gendt, C. Vinckier, 2005 .

Implementation of a System for Metal Contamination Control Based on Classification Criteria

T. Bearda, R. Vos, D. Hellin, 2007 .

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality

Paul Zimmerman, Ben Kaczer, Wilfried Vandervorst, 2006 .

New bending mode in SAQP Si fins and its mitigation

K. Barla, A. Sepúlveda, K. Kenis, 2022, Materials Science in Semiconductor Processing.

Grazing Incidence-X-ray Fluorescence Spectrometry for the Compositional Analysis of Nanometer-Thin High-κDielectric HfO_2 Layers

David Hellin, Stefan De Gendt, Annelies Delabie, 2005, Analytical sciences : the international journal of the Japan Society for Analytical Chemistry.

Silicon Nano-Pillar Test Structures for Quantitative Evaluation of Wafer Drying Induced Pattern Collapse

M. Demand, W. Boullart, D. Hellin, 2011 .

The influence of post-etch InGaAs fin profile on electrical performance

M. A. Pourghaderi, J. Geypen, H. Bender, 2013 .