C. Bousquet

发表

Amorphous Tm3+ doped sulfide thin films fabricated by sputtering

J. Adam, P. Vinatier, V. Nazabal, 2010 .

Magnetic Field Induced Metal-Nonmetal Transition in GaAs-GaAlAs Heterostructures with a Spacer

J. Robert, C. Bousquet, A. Raymond, 1987 .

Radiative transfer and transverse inhomogeneity effects in spectral lines emitted from laser plasmas

C. Bousquet, E. Leboucher-Dalimier, A. Poquérusse, 1990 .

Analysis of polarized Raman spectra of liquids at liquid—solid interfaces

C. Bousquet, M. Masson, M. Harrand, 1995 .

Hydrostatic pressure control of the carrier density in GaAs/GaAlAs heterostructures; Role of the metastable deep levels

P. Delescluse, N. Linh, J. Robert, 1984 .

The measure of the isotopic and hyperfine structure of the radiation Hg 1849 Å by means of the magnetic scanning method

C. Bousquet, N. Bras, E. Leboucher, 1974 .

Hopping conductions studies of p-Hg1−xMnxTe in high magnetic fields: Unusual anisotropy of resistivity

T. Wojtowicz, A. Mycielski, J. Robert, 1985 .

Surface-enhanced Raman scattering studies of lipid planar bilayers in water

G. Bolbach, J. Bolard, M. Másson, 1994 .

Gigantic exchange enhancement of spin g-factor for two-dimensional electron gas in GaAs

F. Alexandre, J. Robert, W. Zawadzki, 1985 .

EPR in LiF: Mn2+ at 35 GHz

C. Bousquet, M. G. Sucre, A. S. Valls, 1972 .

Magnetic freeze-out in doped semiconductors the metal non-metal transition in n-type InSb

J. Robert, C. Bousquet, A. Raymond, 1980 .

New results in transport phenomena in uncompensated n-type InSb with extremely low carrier density

L. Konczewicz, J. Robert, S. Porowski, 1983 .

Absorption profile of the 2288 AA Cd resonance line broadened by pressure effects of Cd and Kr: Cd-Cd and Cd-Kr interaction potentials

C. Bousquet, 1986 .

HIGH PRESSURE TRANSPORT EXPERIMENTS IN 2D SYSTEMS

J. Robert, C. Bousquet, A. Raymond, 1987 .

Two-Dimensional Electron Transport Under Hydrostatic Pressure

J. Robert, J. Mercy, G. Gregoris, 1984 .

Modification of the classical magnetic freeze-out manifestations in n-type Hg1−xCdxTe(x > 18%) due to the presence of resonant levels

J. Robert, C. Bousquet, A. Raymond, 1982 .

Evidence, by transport measurements under hydrostatic pressure, of resonant level induced by implantation defects in expitaxial layers of Hg1−xCdxTe

L. Ghenim, G. Destefanis, J. Robert, 1985 .

Hg-Ar and Hg-Kr interaction potentials from temperature-dependent absorption spectra around 1850 AA

Y. Majdi, C. Bousquet, N. Bras, 1984 .