A.C. Megdanis

73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

J.M.C. Stork, J. Cressler, J. Comfort, 1992, IEEE Electron Device Letters.

Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS)

J.D. Cressler, F. Cardone, K.A. Jenkins, 1991, IEEE Electron Device Letters.

A scaled 0.25- mu m bipolar technology using full e-beam lithography

D.D. Tang, E.J. Petrillo, J. Warnock, 1992, IEEE Electron Device Letters.

55 Ghz Polysilicon-Emitter Graded Sige-Base Pnp Transistors

J.M.C. Stork, J.B. Johnson, B.S. Meyerson, 1991, 1991 Symposium on VLSI Technology.

Graded SiGe-Channel Modulation-Doped p-Mosfets

J.M.C. Stork, S. Verdonckt-Vandebroek, D. Harame, 1991, 1991 Symposium on VLSI Technology.