Andrea Parisini

发表

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Damiano Giubertoni, S. Gennaro, J. J. Hamilton, 2007 .

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

Damiano Giubertoni, B. Colombeau, N. Cowern, 2006 .

Thick porous silicon thermo-insulating membranes

P. Pozzi, Piera Maccagnani, L. Dori, 1999 .

Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens

Sandro Solmi, M. Servidori, Aldo Armigliato, 1990 .

Structural characterization and modeling of damage accumulation in In implanted Si

Enrico Napolitani, Marco Bianconi, Giorgio Lulli, 2004 .

Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice

N. P. Barradas, Maja Buljan, Ivana Capan, 2012 .

Gas sensors for air quality monitoring: realisation and characterisation of undoped and noble metal-doped SnO2 thin sensing films deposited by the pulsed laser ablation

Gian Carlo Cardinali, L. Dori, Sergio Nicoletti, 1999 .

Porous silicon layer permeated with Sn V mixed oxides for hydrocarbon sensor fabrication

Gian Carlo Cardinali, Luca Boarino, L. Dori, 1997 .