Holger von Wenckstern

发表

Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Pedro Barquinha, Elvira Fortunato, Marius Grundmann, 2010 .

Mean barrier height of Pd Schottky contacts on ZnO thin films

Marius Grundmann, Holger Hochmuth, G. Biehne, 2006 .

Metal-Semiconductor Field-Effect Transistors and Integrated Circuits Based on ZnO and Related Oxides

Marius Grundmann, Alexander Lajn, Michael Lorenz, 2012 .

Transparent semiconducting oxides: materials and devices

Marius Grundmann, Alexander Lajn, M. Grundmann, 2010 .

Oxide bipolar electronics: materials, devices and circuits

Marius Grundmann, Chang Yang, Daniel Splith, 2016 .

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga2O3 thin films grown by pulsed laser deposition

Marius Grundmann, Florian Schmidt, Daniel Splith, 2014 .

MESFET Electronics: Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits (Adv. Mater. 47/2010)

Marius Grundmann, Alexander Lajn, Zhipeng Zhang, 2010 .

Identification of pre-breakdown mechanism of silicon solar cells at low reverse voltages

Marius Grundmann, K. Petter, Jörg Lenzner, 2010 .

Group‐III Sesquioxides: Growth, Physical Properties and Devices

Holger von Wenckstern, H. Wenckstern, 2017 .

Ring Oscillators Based on ZnO Channel JFETs and MESFETs

Marius Grundmann, M. Grundmann, H. von Wenckstern, 2016 .

Correlation of pre‐breakdown sites and bulk defects in multicrystalline silicon solar cells

Marius Grundmann, K. Petter, Dominik Lausch, 2009 .