C. H. Tung

发表

Phase change random access memory cell with superlattice-like structure

Tow Chong Chong, X. S. Miao, Rong Zhao, 2006 .

Bilayer gate dielectric study by scanning tunneling microscopy

Hiroshi Iwai, Cedric Troadec, Kuniyuki Kakushima, 2007 .

Study of the thermo-mechanical behavior of glass interposer for flip chip packaging applications

Doug C. H. Yu, C. C. Hsieh, C. Hsieh, 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal–insulator–semiconductor structures and current transport mechanisms

Wai Kin Chim, B. H. Koh, Wee Kiong Choi, 2003 .

Fabrication Aspects of Germanium on Insulator from Sputtered Ge on Si-Substrates

Dim-Lee Kwong, R. Kumar, Gao Fei, 2006 .

Improvement of Ge self-organized quantum dots by use of Sb surfactant

Y. Zhang, Qizhang Huang, T. Sheng, 1998 .

Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm

Kenneth Wu, J. R. Shih, J. Shih, 2009, IEEE International Reliability Physics Symposium.

Comparison of the electromigration behaviors between micro-bumps and C4 solder bumps

C. C. Chiu, Doug C. H. Yu, C. C. Hsieh, 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization

D. R. Frear, King-Ning Tu, P. Elenius, 2000 .

Optical properties of Ge self-organized quantum dots in Si

Ying Zhang, T. Sheng, C. Tung, 1998 .

Precision transmission electron microscopy sample preparation using a focused ion beam by extraction method

C. Tung, C. H. Tung, T. T. Sheng, 1997 .