L. Thevenod

Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs

G. Ghibaudo, F. Andrieu, T. Ernst, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs

G. Reimbold, M. Casse, Mireille Mouis, 2005 .

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Gilles Reimbold, Gerard Ghibaudo, Francois Andrieu, 2009 .