H. Kuriyama

An asymmetric memory cell using a C-TFT for ULSI SRAMs

O. Sakamoto, M. Ashida, Hirokazu Miyoshi, 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

A Vertical /spl Phi/-shape Transistor (V/spl Phi/T) cell for 1 Gbit DRAM and beyond

S. Maegawa, T. Ipposhi, N. Tsubouchi, 1994, Proceedings of 1994 VLSI Technology Symposium.

An artificial fingerprint device (AFD) module using poly-Si thin film transistors with logic LSI compatible process for built-in security

S. Maegawa, T. Ipposhi, M. Inuishi, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

An artificial fingerprint device (AFD): a study of identification number applications utilizing characteristics variation of polycrystalline silicon TFTs

Masahide Inuishi, Shigeto Maegawa, Yasuo Inoue, 2003 .

A large cell-ratio and low node leak 16 M-bit SRAM cell using ring-gate transistors

Natsuro Tsubouchi, A. Tokui, K. Yuzuriha, 1991, International Electron Devices Meeting 1991 [Technical Digest].

A single bitline cross-point cell activation (SCPA) architecture for ultra low power SRAMs

M. Ukita, T. Yamagata, S. Murakami, 1993, 1993 IEEE International Solid-State Circuits Conference Digest of Technical Papers.