K. Yamazaki

Si single-electron CCD

A. Fujiwara, Y. Takahashi, K. Yamazaki, 2001, Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).

Si complementary single-electron inverter

H. Namatsu, K. Kurihara, M. Nagase, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Influence of molecular weight of resist polymers on surface roughness and line-edge roughness

Hideo Namatsu, H. Namatsu, K. Yamazaki, 2004 .

Silicon double-island single-electron device

H. Namatsu, A. Fujiwara, K. Kurihara, 1997, International Electron Devices Meeting. IEDM Technical Digest.

A new approach for reducing line-edge roughness by using a cross-linked positive-tone resist

H. Namatsu, K. Kurihara, T. Yamaguchi, 1999, Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.

Single-electron device using Si nanodot array and multi-input gates

H. Inokawa, A. Fujiwara, Y. Takahashi, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Line-Edge Roughness: Characterization and Material Origin

H. Namatsu, M. Nagase, H. Namatsu, 2002, 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..

Single-Electron Device With Si Nanodot Array and Multiple Input Gates

H. Inokawa, A. Fujiwara, Jung-Bum Choi, 2009, IEEE Transactions on Nanotechnology.

5-nm-Order Electron-Beam Lithography for Nanodevice Fabrication

H. Namatsu, H. Namatsu, K. Yamazaki, 2003, Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.