Y. Kitaura

Single low voltage supply operation GaAs power MESFET amplifier with low-distortion gain-variable attenuator for 1.9-GHz personal handy phone systems

H. Wakimoto, M. Nagaoka, T. Seshita, 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system

H. Wakimoto, M. Nagaoka, K. Kawakyu, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

A 2K-gate GaAs gate array with a WN gate self-alignment FET process

T. Terada, Y. Kitaura, N. Uchitomi, 1985, IEEE Journal of Solid-State Circuits.

A 2-V operation RF front-end GaAs MMIC for PHS hand-set

M. Nagaoka, K. Kawakyu, Y. Kitaura, 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application

T. Sasaki, T. Nitta, Y. Kitaura, 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).