E. K. Lai

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

Kuang-Yeu Hsieh, Chih-Yuan Lu, Wei-Chih Chien, 2011 .

Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory

B. Rajendran, H. L. Lung, M. Breitwisch, 2009, 2009 IEEE International Memory Workshop.

A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTe z phase change material

H. L. Lung, J. Y. Wu, M. BrightSky, 2012, 2012 International Electron Devices Meeting.

Multi-Level Operation of Fully CMOS Compatible WOX Resistive Random Access Memory (RRAM)

Y. C. Chen, K. Y. Hsieh, Chih-Yuan Lu, 2009, 2009 IEEE International Memory Workshop.

High-Speed Multilevel Resistive RAM using RTO WO X

K. Y. Hsieh, S. C. Tsai, Yeong-Der Yao, 2009 .

A scalable volume-confined phase change memory using physical vapor deposition

H. L. Lung, J. Y. Wu, M. BrightSky, 2013, 2013 Symposium on VLSI Technology.

An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

F. M. Lee, M. BrightSky, Y. Zhu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material

H. L. Lung, Y. Zhu, M. Breitwisch, 2011, 2011 International Electron Devices Meeting.

A low power phase change memory using thermally confined TaN/TiN bottom electrode

R. Dasaka, S. Kim, Y. Zhu, 2011, 2011 International Electron Devices Meeting.