Masashi Uematsu

Analysis of Indium Diffusion Profiles Based on the Fermi-Level Effect in Single-Crystal Zinc Oxide

Hajime Haneda, Kenji Matsumoto, Naoki Ohashi, 2008 .

Simulation of clustering and transient enhanced diffusion of boron in silicon

Masashi Uematsu, M. Uematsu, 1998 .

Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism

Masashi Uematsu, M. Uematsu, 1997 .

Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates

Yasuo Takahashi, Kenji Shiraishi, Masao Nagase, 2004 .

Recombination‐enhanced impurity diffusion in Be‐doped GaAs

Kazumi Wada, K. Wada, Masashi Uematsu, 1991 .

Diffusion Model of Gallium in Single-Crystal ZnO Proposed from Analysis of Concentration-Dependent Profiles Based on the Fermi-Level Effect

Hajime Haneda, Yuichi Ikuhara, Yoshiyuki Sato, 2007 .