H. Ennen

Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

Lester F. Eastman, Paul J. Tasker, William J. Schaff, 1989 .

Polarized anisotropic photoluminescence of laser‐related transitions in YAlO3:Nd and YAlO3:Er and line broadening by resonant lattice phonons

B. Dischler, H. Ennen, B. Dischler, 1986 .

Erbium doping of molecular beam epitaxial GaAs

P. Wennekers, R. S. Smith, H. Ennen, 1987 .

1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

A. Axmann, H. Ennen, A. Axmann, 1983 .

1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

A. Axmann, W. Haydl, H. Ennen, 1985 .