Chong Wang

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Wei Mao, Xiaohua Ma, Yue Hao, 2011 .

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate*

Wei Mao, Xiaohua Ma, Yue Hao, 2016 .

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Xiaohua Ma, Yue Hao, Jincheng Zhang, 2011, IEEE Electron Device Letters.

Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Yuan Wang, Xiaohua Ma, Yue Hao, 2014 .

Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

Xiaohua Ma, Yue Hao, Kai Zhang, 2014 .

Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates*

Wei Mao, Yue Hao, Xue-Feng Zheng, 2016 .

Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

Yunlong He, Wei Mao, Xiaohua Ma, 2017 .