S. N. Chattopadhyay

Optically Controlled Silicon MESFET Modeling Considering Diffusion Process

S. Sriram, A. Rudra, N. Motoyama, 2007 .

GaAs OPFET characteristics considering the effect of gate depletion with modulation due to incident radiation

B. B. Pal, S. N. Chattopadhyay, 1992 .

Optically controlled characteristics in an ion-implanted silicon MESFET

B. B. Pal, S. N. Chattopadhyay, V. K. Singh, 1986 .

Fowler–Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices

C. B. Overton, Subba Ramaiah Kodigala, S. N. Chattopadhyay, 2015 .

Analytical modeling of an ion-implanted silicon MESFET in post-anneal condition

B. B. Pal, S. N. Chattopadhyay, 1989 .