A. Nagy

Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates

C. Su, H. Rohdin, V. M. Robbins, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

A 23.6 GHz sub-half-micrometer E/D MODFET divide-by-32/64 static prescaler

D. Mars, H. Rohdin, A. Fischer-Colbrie, 1992 .

A 23.6 GHz SUB-YPpm E/D MODFET DIVIDE-BY-32/64 STATIC PRESCALER

D. Mars, H. Rohdin, A. Fischer-Colbrie, 1991 .

A 23.6 GHz sub-1/2- mu m E/D MODFET divide-by-32/64 static prescaler

R. Jaeger, D. Mars, H. Rohdin, 1991, [1991] GaAs IC Symposium Technical Digest.

Self-aligned contact submicron E/D MODFET IC process: device characteristics and simple circuit applications

C. Kocot, H. Rohdin, A. Fischer-Colbrie, 1990, IEEE International Symposium on Circuits and Systems.

Low-noise, high-speed Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As 0.1-/spl mu/m MODFETs and high-gain/bandwidth three-stage amplifier fabricated on GaAs substrate

J. Seeger, C. Su, C. Madden, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability

C. Su, H. Rohdin, V. M. Robbins, 1999 .

Semi-analytical analysis for optimization of 0.1-/spl mu/m InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability

C. Su, H. Rohdin, N. Moll, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs

N. Moll, C. Su, H. Rohdin, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.