T. Udo

Integration of a 0.13-/spl mu/m CMOS and a high performance self-aligned SiGe HBT featuring low base resistance

S. Wada, T. Hashimoto, T. Tominari, 2002, Digest. International Electron Devices Meeting,.

Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

K. Ohhata, S. Wada, T. Hashimoto, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS

S. Wada, H. Shimamoto, T. Hashimoto, 2003, IEEE International Electron Devices Meeting 2003.

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

Kunihiko Watanabe, Tsuyoshi Fujiwara, Yusuke Nonaka, 2013, IEEE Journal of the Electron Devices Society.