Y. Ōsaka

发表

Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique

H. Yokoyama, A. Chayahara, T. Imura, 1987 .

Possibility of a Si-Based Infrared Detector Using Microcrystalline B-Si-Ge Alloys

K. Kohno, Y. Ōsaka, P. Shresta, 1991 .

Preparation and Crystallization Process of the High-Tc Superconducting Phase (Tc(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics

H. Nasu, Y. Ibara, T. Imura, 1989 .

Formal Theory of an Inhomogeneous Electron Gas

Y. Ōsaka, 1974 .

Formal Theory of an Inhomogeneous Electron Gas and the Application to Problems of Metal Surfaces

Y. Ōsaka, 1974 .

New mode of plasma deposition in a capacitively coupled reactor

M. Ueda, A. Chayahara, M. Hirose, 1984 .

Visible Photoluminescence from Si Microcrystals Embedded in SiO2 Glass Films

K. Kohno, K. Tsunetomo, Y. Ōsaka, 1992 .

Direct photochemical deposition of SiO2 from the Si2H6+O2 system

M. Hirose, Y. Ōsaka, Y. Mishima, 1984 .

Note on the Generalized Form of Compressibility Sum Rule

Y. Ōsaka, 1975 .

Binding Energies of Wannier Excitons in Ga1-xAlxAs Quantum-Well Wires

T. Kodama, Y. Ōsaka, 1985 .

Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si: H Schottky Barriers

M. Hirose, Y. Ōsaka, Tohru S. Suzuki, 1983 .

Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate

Tatsuo Shimizu, A. Chayahara, M. Ueda, 1986 .

Heteroepitaxial growth and optical properties of ZnSxTe1−x on GaAs(100) by RF sputtering

M. Fujisawa, T. Imura, Y. Ōsaka, 1990 .

Heteroepitaxial Growth of ZnSxTe1-x on GaAs(100) by RF Sputtering

T. Imura, Y. Ōsaka, Yoji Tokumitsu, 1989 .

Wide Optical-Gap, Photoconductive a-SixN1-x:H

H. Kurata, M. Hirose, Y. Ōsaka, 1981 .

Characterization of plasma‐deposited silicon nitride films

M. Hirose, S. Yokoyama, Y. Ōsaka, 1980 .

Quantum Density Oscillations of Metal Surface (Planar Uniform-Background Model)

Y. Ōsaka, 1975 .

Two-Phase Structure of a-Si1-xNx:H Fabricated by Microwave Glow-Discharge Technique

A. Chayahara, M. Ueda, T. Hamasaki, 1985 .

Binding Energy of a Screened Hydrogenic Impurity in a Quasi One-Dimensional Electron Gas

T. Kodama, Y. Ōsaka, 1986 .

Internal photoemission in the anodic oxide/GaAs interface

H. Hasegawa, T. Sawada, M. Hirose, 1981 .

Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane

M. Hirose, Y. Ōsaka, Y. Mishima, 1983 .

Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD

H. Yokoyama, M. Okamoto, T. Imura, 1990 .

Electrical characteristics of metal‐insulator‐semiconductor diodes with ZrO2/SiO2 dielectric films

M. Morita, Y. Ōsaka, H. Fukumoto, 1989 .

High field effects in amorphous germanium

M. Hirose, Y. Ōsaka, Tohru S. Suzuki, 1977 .

Electron Spin Resonance in Discharge-Produced Silicon Nitride

M. Hirose, S. Yokoyama, Y. Ōsaka, 1981 .

Physical Properties of Heavily B-doped Microcrystalline Si–Ge Alloys and Schottky Barrier of B–Si–Ge/P-Si

K. Kohno, Y. Ōsaka, Y. Tanabe, 1998 .

Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers

H. Yokoyama, M. Okamoto, Y. Ōsaka, 1990 .

Quantum Size Effect of Semiconductor Microcrystallites Doped in SiO2-Glass Thin Films Prepared by Rf-Sputtering

H. Nasu, K. Tsunetomo, Y. Ōsaka, 1989 .

Bond-Angle Distribution of Sn Atom and 119Sn Mössbauer Spectroscopy in Hydrogenated Amorphous Silicon Doped by Sn

Y. Ōsaka, H. Myoren, 1989 .

Epitaxial Growth of CdTe on GaAs(100) by RF Sputtering

T. Imura, Y. Ōsaka, Yoji Tokumitsu, 1989 .

Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon

M. Hirose, A. Hiraki, T. Imura, 1983 .

Formation of α-Sn by chemical sputtering of β-Sn target in hydrogen plasma

M. Ichihara, T. Imura, Y. Ōsaka, 1987 .

Changes of Structural, Electrical, and Optical Properties of Microcrystalline SixGe1-x Films by Annealing

K. Kohno, T. Imura, Y. Ōsaka, 1986 .

Growth of Microcrystalline SixGe1-x Alloy Films by Sputter-Assisted-Plasma CVD

K. Kohno, T. Imura, Y. Ōsaka, 1984 .

Low‐temperature crystallization of doped a‐Si:H alloys

H. Kurata, M. Hirose, T. Hamasaki, 1980 .

Novel effects of magnetic field on the silane glow discharge

M. Hirose, M. Taniguchi, T. Hamasaki, 1980 .

Structural and Electronic Characterization of Discharge-Produced Boron Nitride

H. Miyamoto, M. Hirose, Y. Ōsaka, 1983 .

Crystalline Qualities and Critical Current Densities of As-Grown Ba2YCu3Ox Thin Films on Silicon with Buffer Layers

Y. Ōsaka, H. Myoren, F. Nishiyama, 1990 .

Hydrogenated Amorphous Silicon Produced by Pyrolysis of Disilane in a Hot Wall Reactor

K. Kojima, M. Hirose, Y. Ōsaka, 1984 .

Nucleation of Microcrystallites in Phosphorus-Doped Si:H Films

H. Kurata, M. Hirose, T. Hamasaki, 1981 .

Amorphous silicon hydrogen alloys produced under magnetic field

M. Hirose, M. Taniguchi, Y. Ōsaka, 1980 .

Lifetime determination of MOS diodes with very thin oxide by their photocurrent spectra

M. Hirose, Y. Ōsaka, S. Kono, 1979 .

Electrical properties of substitutionally doped cvd amorphous silicon

M. Hirose, M. Taniguchi, Y. Ōsaka, 1979 .

New insights on growth mechanism of a‐Si:H from optical emission spectroscopy

H. Kurata, M. Hirose, T. Hamasaki, 2008 .

Optical switching of quantum interference through exchange interactions between coherent electron waves and photoexcited virtual excitons

M. Yamanishi, Y. Ōsaka, K. Yamatani, 1990 .

Ultrafast Control of Quantum Interference Currents by Virtual Charge Polarizations in Biased Quantum Well Structures

M. Yamanishi, Y. Ōsaka, M. Kurosaki, 1988 .

Polaron State at a Finite Temperature

Y. Ōsaka, 1959 .

A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy

S. Yokoyama, Y. Ōsaka, Teiji Iwaoka, 1985 .

Polaron Mobility at Finite Temperature (Weak Coupling Limit)

Y. Ōsaka, 1966 .

T-Matrix Corrections to "Yosida-Okiji-Yoshimori" Equation of the Kondo Problem

Y. Ōsaka, 1971 .

Interface States Induced by Amorphous SiO 2 in MOS Structures

Y. Ōsaka, 1977 .

Model Calculation of Interface State in a MOS Structure

Y. Ōsaka, 1976 .

On the Reflection and Transmission Coefficients Associated with a Lowest Exciton Level (in the Case of Weak Coupling between Polariton and Phonon)

Y. Ōsaka, S. Imai, Y. Takeuti, 1968 .

Structural modification of a-C: H films caused by 2 MeV 4He ion irradiation

S. Nagata, Y. Ōsaka, K. Takahiro, 1991 .

Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate

A. Chayahara, M. Hirose, M. Ueda, 1984 .

Discrete Shifts of Absorption and Emission Lines by Individual Electron-Hole Pair Excitation in DC-Biased Quantum Box Structures

M. Yamanishi, Y. Ōsaka, M. Kurosaki, 1988 .

Morphological fluctuations in discharge-produced μc-Si:H studied by small angle X-ray scattering

S. Miyazaki, M. Hirose, Y. Ōsaka, 1983 .

Theory of the Anomalous Magnetoresistance in Amorphous Si and Ge

Y. Ōsaka, 1979 .

Preparation of High Tc Superconductive Thin Tape from Acid Salts

H. Nasu, Hiroki Kobayashi, T. Imura, 1989 .

High-Tc superconduction of glass-ceramic formed BiSrCaCuO

H. Nasu, Y. Ibara, T. Imura, 1988 .

Amorphous Silicon Static Induction Transistor

M. Hirose, M. Ueda, Y. Ōsaka, 1985 .

Exafs and X-ray diffraction studies on the local structure of sputter-deposited amorphous SixTe1−x alloys

R. Shimizu, K. Tsunetomo, T. Imura, 1990 .

Structural Changes of Amorphous GeTe 2 Films by Annealing (Formation of Metastable Crystalline GeTe 2 Films)

K. Tsunetomo, T. Imura, Y. Ōsaka, 1987 .

Effects of long range components of random potentials on conductivity in two dimensions

Y. Ōsaka, 1980 .

Semiconducting CdTe Microcrystalline-Doped SiO2 Glass Thin Films Prepared by Rf-Sputtering

Yukio Osaka, Hiroyuki Nasu, Keiji Tsunetomo, 1989 .

Ba2YCu3Ox films withTc (end) > 80 K prepared by the pyrolysis of 2-ethylhexanoates

H. Nasu, T. Imura, Y. Ōsaka, 1988 .

Superconducting Y-Ba-Cu-O films with Tc>70 K prepared by thermal decomposition technique of Y-, Ba-, and Cu-2ethylhexanoates

H. Nasu, Y. Ibara, T. Imura, 1987 .

Exciton Structure in Alkali-Halide Crystals

Y. Ōsaka, Fumiaki Goto, 1962 .

Exciton Structures in Alkali Halides

Y. Ōsaka, 1959 .

Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique

S. Matsuo, M. Ueda, T. Imura, 1987 .

Collective Excited States and Dielectric Constant in Insulators

A. Morita, Y. Abe, Y. Ōsaka, 1962 .

Preparation of High-Tc Bi–Sr–Ca–Cu–O Films on Metal Substrates by Pyrolysis of 2-Ethylhexanoates

H. Nasu, T. Imura, Y. Ōsaka, 1988 .

Superconducting Properties of High Tc Ba2YCu3Ox Prepared from Organic or Inorganic Acid Salts by Thermal Decomposition Techniques

H. Nasu, Y. Ibara, T. Imura, 1988 .

Heteroepitaxial growth of Y2O3 films on silicon

Yukio Osaka, Hirofumi Fukumoto, Takeshi Imura, 1989 .

Characterization of epitaxial yttria‐stabilized zirconia/Si interface by ion beam channeling

Y. Ōsaka, Masayuki Yamamoto, H. Fukumoto, 1991 .

Strain measurements in heteroepitaxial yttria‐stabilized zirconia on Si by ion beam channeling

Y. Ōsaka, F. Nishiyama, H. Fukumoto, 1990 .

As-Grown Preparation of Superconducting Epitaxial Ba2YCu3Ox Thin Films Sputtered on Epitaxially Grown ZrO2/Si(100)

H. Nasu, Y. Ōsaka, H. Myoren, 1989 .

Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon

Yukio Osaka, Hirofumi Fukumoto, Takeshi Imura, 1988 .

Growth of crystalline zirconium dioxide films on silicon

Yukio Osaka, Masaki Ichihara, Hirofumi Fukumoto, 1985 .

Epitaxial Growth of Ba2YCu3Ox Thin Film on Epitaxial ZrO2/Si(100)

H. Nasu, M. Hattori, S. Yamanaka, 1988 .

Heteroepitaxial Growth of Si ON ZrO2-Y2O3/Si

Y. Ōsaka, Masayuki Yamamoto, H. Fukumoto, 1991 .

YBa2Cu3O7-δ Angle Grain Boundary Junction on Si Bicrystal Substrate

Y. Mutoh, T. Yamashita, Jian Chen, 1991 .

Artificial YBCO grain boundary junctions on SrTiO3 and Si bicrystals

T. Yamashita, Jian Chen, Y. Hirotsu, 1991 .

Fabrication of All-High-Tc Josephson Junction Using As-Grown YBa2Cu3Ox Thin Films

Y. Ōsaka, H. Myoren, K. Harada, 1991 .

Epitaxial Growth of CdTe on InSb(100) by RF Sputtering

T. Imura, Y. Ōsaka, Y. Nishibayashi, 1987 .

A New Technique of Boron Doping in Si:H Films

Yukio Osaka, Toshihiko Hamasaki, Masataka Hirose, 1981 .

Novel Deposition Technique of a-Si: H –Silane Glow Discharge in Magnetic Field–

H. Kurata, M. Hirose, T. Hamasaki, 1980 .

High‐rate deposition of amorphous hydrogenated silicon from a SiH4 plasma

M. Ueda, A. Chayahara, M. Hirose, 1984 .

Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD Technique

M. Okamoto, Y. Ōsaka, Y. Utsumi, 1990 .

Preparation and Properties of Ge Microcrystals Embedded in SiO2 Glass Films

Yukio Osaka, Hiroyuki Nasu, Keiji Tsunetomo, 1990 .

Photoluminescence of Si Microcrystals Embedded in SiO2 Glass Films

Yukio Osaka, K. Kohno, Y. Ōsaka, 1994 .

Defect compensation in doped CVD amorphous silicon

M. Hirose, M. Taniguchi, S. Hasegawa, 1980 .

Substitutional doping of photochemically‐deposited amorphous hydrogenated silicon

M. Hirose, Y. Ōsaka, Y. Mishima, 1984 .

Annealing effect on structure and properties of a-Si:H prepared at high deposition-rate

A. Chayahara, M. Ueda, T. Imura, 1985 .

Effects of growth rate on the microcrystalline characteristics of plasma-deposited μc-Si:H

S. Miyazaki, M. Hirose, Y. Ōsaka, 1984 .

Substitutional doping of chemically vapor-deposited amorphous silicon

Yukio Osaka, M. Hirose, M. Taniguchi, 1978 .

Ultrasonic Attenuation in Normal Metals

Y. Ōsaka, 1963 .

Energy loss of 4He ions in Mylar, Kapton and a-C : H

Y. Ōsaka, K. Takahiro, F. Nishiyama, 1990 .

Stopping cross sections of various carbon materials for 4He ions

Y. Ōsaka, K. Takahiro, F. Nishiyama, 1991 .

Temperature Dependence of Plasma Frequency

Y. Ōsaka, 1963 .

Resonant Tunneling through Si/SiO2 Double Barriers

M. Hirose, M. Morita, Y. Ōsaka, 2015 .

Characterization of plasma-deposited microcrystalline silicon

Shuichi Miyazaki, Y. Mishima, Yukio Osaka, 1982 .

A Note on the Dielectric Constant and Causality

A. Morita, Y. Ōsaka, 1961 .

Higher Order Correction to Screening Constant

Y. Ōsaka, 1962 .

Optical determination of mobility and carrier concentration in heavily doped polycrystalline silicon

M. Hirose, Y. Ōsaka, Y. Mishima, 1980 .

Optical nonlinearity of CdSe microcrystallites in a sputtered SiO2 film

Yukio Osaka, Hiroyuki Nasu, Keiji Tsunetomo, 1990 .

RENORMALIZATION CONSTANT OF ELECTRON GAS

Y. Ōsaka, 1963 .

Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes

M. Hirose, Y. Ōsaka, Y. Mishima, 1981 .

Preparation of BiSrCaCu2Ox Films with Tc>77 K by Pyrolysis of Organic Acid Salts

H. Nasu, Y. Ibara, T. Imura, 1988 .

Formation of High-Tc Superconducting BiSrCaCu2Ox Films on ZrO2/Si(100)

Yukio Osaka, Hiroyuki Nasu, Hiroaki Myoren, 1988 .

Localized States in Amorphous and Polycrystallized Si

M. Hirose, Y. Ōsaka, T. Nakashita, 1978 .

Singularities in the X-Ray Absorption of Metals

Y. Ōsaka, A. Okiji, Akio Kato, 1970 .

Mechanical properties of cubic boron nitride film on Si prepared by ECR plasma

M. Okamoto, Y. Ōsaka, Y. Utsumi, 1993 .

Properties of BN thin films deposited by plasma CVD

H. Yokoyama, A. Chayahara, M. Fujisawa, 1988 .

Theory of Polaron Mobility

Y. Ōsaka, 1961 .

Impurity doping in chemically vapor‐deposited amorphous hydrogenated silicon from disilane

M. Hirose, Y. Ōsaka, Y. Mishima, 1984 .

Hydrogen Implantation into CVD Amorphous Silicon

M. Hirose, Y. Ōsaka, Tohru S. Suzuki, 1980 .

On the Kinetic Theory of Unstable Plasmas

K. Nishikawa, Y. Ōsaka, 1965 .

Preferential segregation of dopants in μc-Si:H

M. Hirose, M. Ueda, T. Hamasaki, 1983 .

Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures

M. Hirose, Y. Ōsaka, Y. Mishima, 1981 .

Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates

A. Chayahara, M. Ueda, T. Imura, 1986 .

Note on the Instability of an Interacting Electron Gas in the RP Approximation

Y. Ōsaka, 1967 .

Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors

Yukio Osaka, Masataka Hirose, Tohru S. Suzuki, 1982 .

Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba2YCu3Ox Thin Films on YSZ/Si(100)

T. Hamasaki, Y. Ōsaka, H. Myoren, 1989 .

Josephson Effect in Epitaxial Ba2YCu3Ox Thin Films on ZrO2/Si

T. Hamasaki, Y. Ōsaka, H. Myoren, 1990 .

Note on the Boltzmann Equation for Polarons

Y. Ōsaka, 1973 .

Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique

A. Chayahara, M. Ueda, T. Imura, 1985 .

Structural Changes of Amorphous Ge1-xSnx Alloy Films by Annealing

T. Imura, Y. Ōsaka, H. Myoren, 1986 .

Electronic properties of chemically deposited polycrystalline silicon

M. Hirose, M. Taniguchi, Y. Ōsaka, 1979 .

YBCO artificial grain boundary junctions on Si

T. Yamashita, J. Chen, Y. Ōsaka, 1993, IEEE Transactions on Applied Superconductivity.

Energy distribution of trapping states in polycrystalline silicon

M. Hirose, Y. Ōsaka, S. Hirae, 1980 .

Stability of metastable GeTe2 in thin films

K. Tsunetomo, T. Imura, Y. Ōsaka, 1987 .

Appearance of Quasi-Direct Optical Transition from Si Network in SiO2-Doped Si Films

Y. Ōsaka, Fumitaka Toyomura, H. Kohno, 1993 .

Study of the Surface of CdTe Treated in H2 Plasma

T. Imura, Y. Ōsaka, Y. Nishibayashi, 1989 .

Evaluation of crystalline quality of zirconium dioxide films on silicon by means of ion-beam channeling

T. Imura, Y. Ōsaka, Y. Nishibayashi, 1988 .

Epitaxial and As-Grown Preparation of Ba2YCu3Ox Thin Films on Si with Epitaxially Grown ZrO2 as a Buffer Layer

Yukio Osaka, Toshihiko Hamasaki, Hiroaki Myoren, 1990, Other Conferences.

Evaluation of crystalline quality of heteroepitaxial yttria‐stabilized zirconia films on silicon by means of ion beam channeling

Yukio Osaka, Hirofumi Fukumoto, Takeshi Imura, 1989 .

Light element detection in thin films with MeV protons

Y. Ōsaka, K. Takahiro, F. Nishiyama, 1990 .

Characterization of BN Thin Films Deposited by Plasma CVD

H. Yokoyama, A. Chayahara, T. Imura, 1991 .

Influence of interface states on field effect and capacitance-voltage characteristics of metal/oxide/a-Si:H structures

M. Hirose, M. Ueda, Y. Ōsaka, 1982 .

Formation of Polycrystalline SiC in ECR Plasma

A. Chayahara, T. Imura, Y. Ōsaka, 1986 .

Structure changes by annealing and doping of a-Si:H prepared at high deposition rate studied by means of positron annihilation

H. Nasu, Masao Watanabe, M. Ueda, 1987 .

Properties of amorphous silicon nitride films prepared at high deposition rate

T. Imura, Y. Ōsaka, Y. Nishibayashi, 1985 .

DSC Studies of P-Doped A-Si:H

S. Matsuo, H. Nasu, T. Imura, 1988 .

Note on Plasmon Damping

Y. Ōsaka, 1963 .

Mechanism of phosphorus pile‐up in the Si‐SiO2 interface

M. Hirose, Y. Ōsaka, T. Kimura, 1984 .

The Chemical Shift in XPS O1s Spectra of Non-Bridging to Bridging Oxygens in Modified Silicate Glasses

H. Nasu, Y. Ōsaka, S. Makida, 1987 .

Substitutional Doping of a-SixNi1-x: H

H. Miyamoto, H. Kurata, M. Hirose, 1982 .

Optical Emission Spectroscopy of the SiH4-NH3-H2 Plasma during the Growth of Silicon Nitride

Shin Yokoyama, Yukio Osaka, Masataka Hirose, 1981 .

Study of amorphous Ge_SiO2_P+Si tunnel junctions

M. Hirose, Y. Ōsaka, T. Nakashita, 1976 .

Scanning tunneling microscopy of hexagonal BN grown on graphite

T. Endo, Y. Ōsaka, H. Fukumoto, 1991 .

Characterization of Si MIS solar cell

M. Hirose, Tetsuhiro Okuno, Y. Ōsaka, 1983 .

GaAs MOS structures with Al2O3 grown by molecular beam reaction under UV excitation

M. Hirose, S. Yokoyama, Y. Ōsaka, 1979 .

AUGER ANALYSIS COUPLED WITH CAPACITANCE STUDIES OF THE Si-SiO2 INTERFACE

T. Hattori, M. Hirose, Y. Ōsaka, 1980 .

Effect of the Coulomb Interaction on Ultrasonic Attenuation

Y. Ōsaka, 1964 .

Effect of Coulomb Interaction on Longitudinal Ultrasonic Attenuation

Y. Ōsaka, 1962 .