Sheng Jiang

发表

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

Andrew J. Forsyth, Pablo F. Miaja, Sheng Jiang, 2017, IEEE Transactions on Power Electronics.

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

J. S. Cheong, K. B. Lee, D. Wallis, 2018 .

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

K. B. Lee, P. Houston, Sheng Jiang, 2020, Journal of Physics D: Applied Physics.

Modelling the closely-coupled cascode switching process

A. Forsyth, D. Wallis, C. Humphreys, 2016, 2016 IEEE Energy Conversion Congress and Exposition (ECCE).

Exploring an Approach toward the Intrinsic Limits of GaN Electronics

Tao Wang, P. Fletcher, Sheng Jiang, 2020, ACS applied materials & interfaces.

A 624 V 5 A All‐GaN Integrated Cascode for Power‐Switching Applications

P. Houston, Sheng Jiang, Kean-Boon Lee, 2020, physica status solidi (a).

Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

C. T. Foxon, K. B. Lee, D. Wallis, 2017 .

Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

M. Uren, Martin Kuball, P. Houston, 2019, IEEE Transactions on Electron Devices.

Field Plate in All-GaN Cascode Heterojunction Field-Effect

M. Uren, Martin Kuball, P. Houston, 2019 .

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

P. R. Berger, R. Loo, M. Caymax, 2009, 2009 International Semiconductor Device Research Symposium.

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

K. B. Lee, M. Uren, D. Wallis, 2015 .

Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers

Peng Chen, Jonathan Lees, Paul J. Tasker, 2019, IEEE Transactions on Microwave Theory and Techniques.

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

C. T. Foxon, K. B. Lee, D. Wallis, 2016 .

Monolithically Integrated μLEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach

Tao Wang, Sheng Jiang, P. Feng, 2021, Advanced Materials Technologies.

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

Sheng Jiang, Peter A. Houston, Ivor Guiney, 2015, Semiconductor Science and Technology.

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

K. B. Lee, D. Wallis, C. Humphreys, 2014 .