I. Guiney

发表

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

Andrew J. Forsyth, Pablo F. Miaja, Sheng Jiang, 2017, IEEE Transactions on Power Electronics.

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

Ivor Guiney, Colin J. Humphreys, Matthias Beck, 2016 .

Numerical prediction of the saturation limit of atmospheric pressure AC dielectric barrier discharges

K. Arshak, I. Guiney, E. Forde, 2009, Journal of Plasma Physics.

Theoretical and Experimental Considerations for Bacteria Sterilization Using a Novel Multielectrode Dielectric-Barrier Discharge System

C. Adley, K. Arshak, I. Guiney, 2008, IEEE Transactions on Plasma Science.

Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacks

D. Wallis, I. Thayne, C. Humphreys, 2017 .

Dielectric barrier discharge species gain for microelectronic substrate treatment

O. Korostynska, K. Arshak, I. Guiney, 2008, 2008 IEEE 35th International Conference on Plasma Science.

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

J. S. Cheong, K. B. Lee, D. Wallis, 2018 .

Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology

B. Benakaprasad, A. Eblabla, X. Li, 2017, IEEE Microwave and Wireless Components Letters.

Modelling the closely-coupled cascode switching process

A. Forsyth, D. Wallis, C. Humphreys, 2016, 2016 IEEE Energy Conversion Congress and Exposition (ECCE).

Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

K. B. Lee, M. Uren, D. Wallis, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure

M. T. Hibberd, C. Humphreys, B. Spencer, 2016, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates

B. Benakaprasad, A. Eblabla, X. Li, 2016, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

C. T. Foxon, K. B. Lee, D. Wallis, 2017 .

Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model

C. Humphreys, S. Raghavan, R. Muralidharan, 2019, IEEE Transactions on Electron Devices.

Investigation of recombination effects in dielectric barrier discharges: A model

K. Arshak, I. Guiney, E. Forde, 2007, 2007 16th IEEE International Pulsed Power Conference.

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

K. B. Lee, C. Humphreys, R. Oliver, 2018, Journal of Applied Physics.

High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for $X$ -Band Applications

A. Eblabla, X. Li, K. Elgaid, 2015, IEEE Electron Device Letters.

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

K. B. Lee, D. Wallis, C. Humphreys, 2018 .

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

K. B. Lee, M. Uren, D. Wallis, 2015 .

Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes

C. Humphreys, O. Fenwick, W. Gillin, 2021, Advanced Optical Materials.

Material dependent dielectric breakdown model

K. Arshak, I. Guiney, E. Forde, 2008 .

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

C. T. Foxon, K. B. Lee, D. Wallis, 2016 .

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

C. Humphreys, R. Muralidharan, P. Sen, 2020, Journal of Vacuum Science & Technology B.

Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique

D. Wallis, Kean-Boon Lee, I. Guiney, 2022, IEEE Electron Device Letters.

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Sung-Jin Cho, Paul R. Chalker, Iain G. Thayne, 2016 .

Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC

K. Elgaid, B. Benakaprasad, A. Eblabla, 2016, 2016 46th European Microwave Conference (EuMC).

Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

C. Humphreys, S. Raghavan, R. Muralidharan, 2017, IEEE Transactions on Electron Devices.

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Martin Kuball, Peter A. Houston, Michael J. Uren, 2015, IEEE Transactions on Electron Devices.

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

Sheng Jiang, Peter A. Houston, Ivor Guiney, 2015, Semiconductor Science and Technology.

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

K. B. Lee, D. Wallis, C. Humphreys, 2014 .

A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

C. Humphreys, S. Raghavan, R. Muralidharan, 2019, physica status solidi (a).

Single-step manufacturing process for the production of graphene-V/III LED heterostructures

Ivor Guiney, Simon Thomas, Colin J. Humphreys, 2017, OPTO.