H.-J. Thees

The formation of narrow nanocluster bands in Ge-implanted SiO2-layers

B. Schmidt, W. Skorupa, A. Markwitz, 1999 .

Microstructure and electrical properties of Ge- and Si-nanoclusters in implanted gate oxide for embedded memory applications

K. Stegemann, H.-J. Thees, T. Gebel, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Memory Effects of Ion-Beam Synthesized Ge and Si Nanoclusters in Thin SiO 2 -Layers

K. Stegemann, W. Skorupa, W. Möller, 1999 .

Memory properties of Si+ implanted gate oxides: from MOS capacitors to nvSRAM

K. Stegemann, J. Borany, H.-J. Thees, 2002 .

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

J. Mazurier, M. Vinet, P. Javorka, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Non-volatile memories based on Si+-implanted gate oxides

K. Stegemann, W. Skorupa, J. Borany, 2001 .