S. Kumashiro

发表

A 1-ps Resolution On-Chip Sampling Oscilloscope with 64:1 Tunable Sampling Range Based on Ramp Waveform Division Scheme

K. Inagaki, D.D. Antono, M. Takamiya, 2006, 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers..

MOSFET modeling for RF-circuit simulation

H.J. Mattausch, S. Kumashiro, T. Ohguro, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

HiSIM: a MOSFET model for circuit simulation connecting circuit performance with technology

H.J. Mattausch, S. Kumashiro, M. Miura-Mattausch, 2002, Digest. International Electron Devices Meeting,.

MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design

S. Kumashiro, Mitiko Miura-Mattausch, S. Miyamoto, 2004 .

HiSIM: a drift-diffusion-based advanced MOSFET model for circuit simulation with easy parameter extraction

S. Kumashiro, H.J. Mattausch, M. Miura-Mattausch, 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications

H.J. Mattausch, S. Kumashiro, T. Ohguro, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Analysis and Compact Modeling of MOSFET High-Frequency Noise

H.J. Mattausch, S. Kumashiro, T. Ohguro, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

H.J. Mattausch, S. Kumashiro, T. Ohguro, 2006, IEEE Transactions on Electron Devices.

HiSIM: The first complete drift-diffusion MOSFET model for circuit simulation

H.J. Mattausch, S. Kumashiro, M. Miura-Mattausch, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Synthetic soft error rate simulation considering neutron-induced single event transient from transistor to LSI-chip level

S. Kumashiro, M. Hane, Y. Tosaka, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, Takahiro Iizuka, 2005 .

Simple nondestructive extraction of the vertical channel-impurity profile of small-size metal–oxide–semiconductor field-effect transistors

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, S. Kumashiro, 2002 .

Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers

S. Kumashiro, Kenichi Kasahara, S. Sugou, 1989 .

Scaling effect and circuit type dependence of neutron induced single event transient

S. Kumashiro, T. Uemura, T. Fukuda, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

Hans Jurgen Mattausch, S. Kumashiro, M. Miura-Mattausch, 2002 .

Model of Pocket-Implant Mosfets for Circuit Simulation

Hans Jurgen Mattausch, S. Kumashiro, M. Miura-Mattausch, 2001 .

Physical modeling of the reverse-short-channel effect for circuit simulation

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, S. Kumashiro, 2001 .

A 760mS/mm N+self-aligned enhancement mode doped-channel MIS-like FET (DMT)

S. Kumashiro, H. Toyoshima, A. Okamoto, 1986, 1986 International Electron Devices Meeting.

Origin of Enhanced Thermal Noise for 100nm-MOSFETs

Hiroo Masuda, Hans Jurgen Mattausch, Mitiko Miura-Mattausch, 2003 .

Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients

S. Kumashiro, M. Miura-Mattausch, K. Yamashita, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHz

S. Kumashiro, K. Honjo, M. Madihian, 1987, IEEE Transactions on Electron Devices.

On the validity of conventional MOSFET nonlinearity characterization at RF switching

S. Kumashiro, T. Ohguro, M. Miura-Mattausch, 2006, IEEE Microwave and Wireless Components Letters.

Precise physical modeling of the reverse-short-channel effect for circuit simulation

S. Kumashiro, M. Miura-Mattausch, N. Shigyo, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Fabrication and modeling of a novel self-Aligned AlGaAs/GaAs heterojunction bipolar transistor with a cutoff frequency of 45 GHz

S. Kumashiro, K. Honjo, M. Madihian, 1986, 1986 International Electron Devices Meeting.