J. K. Kim

发表

Unidirectional Pt silicide nanowires grown on vicinal Si(100).

Hangil Lee, Sehun Kim, Junghun Choi, 2008, The Journal of chemical physics.

In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

U. Mishra, S. Keller, Xiaofeng Liu, 2013 .

Metal/GaN reaction chemistry and their electrical properties

S. Seol, Y. Hwu, P. Ruterana, 2004 .

Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

U. Mishra, M. Laurent, J. K. Kim, 2015 .

Influences of Cr Doping on the Electrical Properties in BiFeO3 Thin Films

R. Guo, A. Bhalla, W. J. Kim, 2006 .

Ultrathin Zirconium Silicate Films Deposited on Si(100) Using Zr ( O i Pr ) 2 ( thd ) 2 , Si ( O t Bu ) 2 ( thd ) 2 , and Nitric Oxide

S. Moisa, T. Chao, Tiao-Yuan Huang, 2003 .

Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

X. Liu, S. Ringel, S. Keller, 2016 .

In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge

U. Mishra, S. Keller, Silvia H. Chan, 2014 .

Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN

U. Mishra, S. Keller, Jing Lu, 2014 .

Growth of Spinel CoMn2O4 Thin Films and Post-growth Annealing Effects on Their Physical Properties

J. K. Kim, Jonghyun Song, D. R. Kim, 2015 .

Improved electrical properties of ZnO:Al transparent conducting oxide films using a substrate bias

S. W. Lee, D. Lim, D. Kwak, 2006 .

Effects of annealing conditions on the electrical properties of Bi4-xNdxTi3O12 (x = 0.46) thin films processed at low temperature

J. K. Kim, S. S. Kim, W. Kim, 2006 .

PROPERTIES OF SOL-GEL DERIVED BISMUTH-BASED PYROCHLORE THIN FILMS

W. J. Kim, J. K. Kim, S. S. Kim, 2006 .

Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy

Y. Xi, F. Mont, J. Smart, 2007 .

Revisiting the stopping powers of Si and SiO2 for 4He ions: 0.5–2.0 MeV

W. Lennard, J. K. Kim, H. Xia, 2004 .

Development of dihaploid lines resistant to Erwinia carotovora in Chinese cabbage

S. S. Lee, J. K. Kim, W. Jun, 2001 .

Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

U. Mishra, J. Speck, Xiaofeng Liu, 2013 .

Surface sensitive particle-induced X-ray emission

L. Rodríguez-Fernández, W. Lennard, J. K. Kim, 2002 .

Cross - Type Domain in Exchange - coupled NiO / NiFe bilayers

D. Hwang, R. Gomez, J. K. Kim, 2002 .

Thermal stability and diffusion in gadolinium silicate gate dielectric films

Rafael Peretti Pezzi, Dolf Landheer, Israel Jacob Rabin Baumvol, 2001 .

Microscopic domain structure in unidirectional and isotropic exchange-coupled NiO/NiFe bilayers

S. Chung, Sang-Suk Lee, D. Hwang, 2002 .

Effects of Annealing Temperature on the Electrical Properties of Cr-Substituted BiFeO3 Thin Films

A. Bhalla, J. K. Kim, S. S. Kim, 2007 .