T. P. Samsonova

发表

Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode

Y. Zadiranov, P. Ivanov, A. Potapov, 2020 .

High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings

I. Grekhov, P. Ivanov, A. Potapov, 2009 .

High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction

I. Grekhov, P. Ivanov, A. Potapov, 2008 .

Experimental 4H-SiC junction-barrier Schottky (JBS) diodes

I. V. Grekhov, A. S. Potapov, I. Grekhov, 2009 .

Direct bonding of silicon carbide wafers with a regular relief at the interface

L. S. Kostina, I. Grekhov, J. Je, 2006 .

Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding

L. S. Kostina, I. Grekhov, P. Ivanov, 2007 .

Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base

I. Grekhov, A. Konstantinov, P. Ivanov, 2003 .

Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes

P. Ivanov, A. Potapov, T. P. Samsonova, 2018, Semiconductors.

Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode

I. Grekhov, P. Ivanov, A. Potapov, 2017 .

Excess leakage currents in high-voltage 4H-SiC Schottky diodes

I. Grekhov, P. Ivanov, A. Potapov, 2010 .

Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

I. Grekhov, P. Ivanov, A. Potapov, 2016 .

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

P. Ivanov, A. Potapov, T. P. Samsonova, 2016 .

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

I. Grekhov, P. Ivanov, A. Potapov, 2013 .

SiC-based phototransistor with a tunnel MOS emitter

A. F. Shulekin, I. Grekhov, M. Vexler, 1999 .