P. A. Badoz

发表

The Physics of Metal Base Transistors

G. Vincent, C. D'anterroches, G. Glastre, 1987 .

Covering and filling of porous silicon pores with Ge and Si using chemical vapor deposition

D. Bensahel, A. Halimaoui, Y. Campidelli, 1995 .

Superconductivity in ultra-thin CoSi2 epitaxial films

E. Rosencher, F. d'Avitaya, P. A. Badoz, 1985 .

Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure

I. Sagnes, P. A. Badoz, L. Garchery, 1996 .

Room Temperature Electron Mobility Enhancement in a Strained Si Channel

I. Sagnes, P. A. Badoz, L. Garchery, 1995 .

Near‐infrared optical properties of CoSi2 thin films

H. Känel, P. A. Badoz, J. Henz, 1990 .

Transport and near‐infrared optical properties of ErSi2 thin films

I. Sagnes, G. Vincent, P. A. Badoz, 1992 .

The Ir/Si/ErSi2 tunable infrared photoemission sensor

I. Sagnes, Y. Campidelli, P. A. Badoz, 1994 .

Tunable Infrared Detection Using Epitaxial Silicide/Silicon Heterostructures

I. Sagnes, Y. Campidelli, S. Bodnar, 1993 .

Tunable infrared photoemission sensor on Si using epitaxial ErSi2/Si heterostructures

I. Sagnes, Y. Campidelli, G. Vincent, 1993 .

Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2

G. Fishman, E. Rosencher, P. A. Badoz, 1987 .

Electron mobility enhancement in a strained Si channel

I. Sagnes, J. Dupuy, P. A. Badoz, 1995 .

Infrared spectroscopy in p-type SiGe/Si quantum wells

Y. Guldner, I. Sagnes, Y. Campidelli, 1996 .

Selective silicon epitaxial growth on a submicrometer WSi2 grating: Application to the permeable base transistor

J. Regolini, D. Bensahel, P. A. Badoz, 1990 .

Physics and Fabrication of Metal-Semiconductor Microstructures

E. Rosencher, P. A. Badoz, 1988 .

Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature

C. D'anterroches, J. Derrien, J. Veuillen, 1987 .

Low-temperature transport properties of ultrathin CoSi2 epitaxial films

C. D'anterroches, E. Rosencher, F. d'Avitaya, 1987 .

Electronic transport properties of epitaxial erbium silicide/silicon heterostructures

F. d'Avitaya, J. Chroboczek, P. A. Badoz, 1989 .

Study of ballistic transport in Si‐CoSi2‐Si metal base transistors

G. Vincent, S. Delage, J. Pfister, 1986 .

Growth, characterization and electrical properties of epitaxial erbium silicide

Y. Campidelli, F. d'Avitaya, J. Chroboczek, 1990 .

Electrical transport properties in epitaxial codeposited CoSi2 layers on 〈111〉 Si

H. Känel, E. Rosencher, P. A. Badoz, 1988 .

Growth of αRh2As on GaAs (001) in a molecular‐beam epitaxy system

E. Rosencher, P. A. Badoz, Y. Ballini, 1988 .

Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2 grid

J. Regolini, D. Bensahel, P. A. Badoz, 1990 .

Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensor

Y. Campidelli, F. d'Avitaya, P. A. Badoz, 1992 .

Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties

Y. Campidelli, F. d'Avitaya, J. Chroboczek, 1989 .

Electrical characterisation of epitaxially overgrown Si in Si /CoSi2/Si metal base transistor

S. Delage, E. Rosencher, F. d'Avitaya, 1986 .

Parallel and perpendicular transport in Si/CoSi2 and Si/CoSi2/Si heterostructures

E. Rosencher, F. d'Avitaya, P. A. Badoz, 1986 .

Si permeable-base transistor realization using a MOS-compatible technology

G. Vincent, E. Rosencher, P. A. Badoz, 1989, IEEE Electron Device Letters.

Si Permeable Based Transistor Realization Using a MOS Compatible Technology

G. Vincent, E. Rosencher, P. A. Badoz, 1989, ESSDERC '89: 19th European Solid State Device Research Conference.

Growth and Electronic Transport in Thin Epitaxial CoSi2 — Si Heterostructures

G. Vincent, C. D'anterroches, G. Fishman, 1989 .

Search for quantum size effects in ultrathin epitaxial metallic films

E. Rosencher, F. d'Avitaya, P. A. Badoz, 1991 .

Optical absorption evidence of a quantum size effect in porous silicon

I. Sagnes, G. Vincent, A. Halimaoui, 1993 .

Epitaxy and doping of Si and Si1−xGex at low temperature by rapid thermal chemical vapor deposition

I. Sagnes, D. Dutartre, J. Dupuis, 1993 .

Photoinduced intersubband absorption in Si/SiGe quantum wells

Z. Moussa, F. Julien, I. Sagnes, 1995 .

Photoinduced infrared spectroscopy of bound-to-bound and bound-to-continuum transitions in SiGe/Si quantum wells

Z. Moussa, F. Julien, I. Sagnes, 1996 .

Infrared absorption in p-type SiGeSi quantum wells: Intersubband transition and free carrier contributions

Y. Guldner, I. Sagnes, Y. Campidelli, 1996 .

Charge transfer in p + -Si/Si 1−x Ge x modulation doped heterostructures grown by RTCVD

Y. Guldner, I. Sagnes, D. Dutartre, 1994 .

Magnetotransport and microwave photoresistivity of two-dimensional hole gases in Si-Si1−xGex heterostructures

Y. Guldner, I. Sagnes, D. Dutartre, 1994 .

Investigation of optical properties of free-standing porous silicon films by absorption and mirage effect

I. Sagnes, G. Vincent, F. Leblanc, 1993 .

Temperature dependence of Schottky barrier height on Si: Experimental evidence for Fermi energy pinning relative to either valence or conduction band

E. Rosencher, P. A. Badoz, J. Duboz, 1990 .

Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a GSMBE system

G. Ropars, A. Corre, D. Lecrosnier, 1990 .