R. Ormond

发表

Thermal redistribution of oxygen during solid‐phase regrowth of arsenic‐implanted amorphized Si

B. Furman, D. Day, T. Magee, 1981 .

Growth of low dislocation density CdTe films on hydroplaned CdTe substrates by molecular beam epitaxy

T. Magee, T. Myers, J. Schetzina, 1983 .

Correlation between channel hot-electron degradation and radiation-induced interface trapping in N-channel LDD devices

E. E. King, J. J. Wang, L. Palkuti, 1991 .

Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealing

S. Graham, T. Magee, L. Palkuti, 1981 .

cw laser recrystallization of 〈100〉 Si on amorphous substrates

James F. Gibbons, T. J. Magee, K. F. Lee, 1979 .

Microstructural investigations of refractory metal silicide films on silicon

B. Rodrigues, T. Magee, H. Kawayoshi, 1984 .

Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs

D. Day, T. Magee, C. A. Evans, 1981 .

Low‐temperature redistribution of Cr in boron‐implanted GaAs in the absence of encapsulant stress

K. S. Lee, T. Magee, C. A. Evans, 1980 .

Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing

J. Gibbons, D. Day, T. Magee, 1981 .

Annealing of damage and redistribution of Cr in boron‐implanted Si3N4‐capped GaAs

T. J. Magee, Charles A. Evans, T. Magee, 1980 .

cw laser assisted diffusion and activation of tin in GaAs from a SnO2/SiO2 source

J. Gibbons, T. Magee, R. Ormond, 1981 .

Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substrates

T. Magee, C. Leung, H. Kawayoshi, 1985 .

Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damage

W. G. Opyd, James F. Gibbons, T. J. Magee, 1983 .