Hiroyasu Ishikawa

发表

ICONE23-2152 DEVELOPMENT OF EQUIPMENT FOR MIGRATION CONTROL OF RADIOACTIVE CESIUM ABSORBED IN SUSPENDED SOLID IN THE RIVER WATER

Takuya Ohyama, Hiroyasu Ishikawa, 2015 .

Electric handbearbeitungsgeraet with circuit board

Hiroyasu Ishikawa, Jyuro Kabayashi, Masanori Ito, 1981 .

2A2-R02 Development of Microscale Magnetic Tags for Tracing Biological Information of Cells

Yoko Yamanishi, Yuya Fujiwara, Hiroyasu Ishikawa, 2015 .

High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate

Yoshiaki Sano, Hiroyasu Ishikawa, Tomoyuki Yamada, 2003 .

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2005 .

Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1996 .

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Takashi Jimbo, Yoshiaki Sano, Hiroyasu Ishikawa, 2004 .

Characterization of different-Al-content AlxGa1−xN/GaN heterostructures and high-electron-mobility transistors on sapphire

Takashi Jimbo, Hiroyasu Ishikawa, S. Arulkumaran, 2003 .

Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2002 .

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Takashi Jimbo, Masayoshi Umeno, Osamu Oda, 2002 .

Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors

Hiroyasu Ishikawa, Takashi Egawa, T. Egawa, 2005 .

Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures

Hiroyasu Ishikawa, Takashi Egawa, Maosheng Hao, 2004 .

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2003 .

Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

Takashi Jimbo, Kaoru Inoue, Hiroyasu Ishikawa, 2003 .

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Toshihiko Kosugi, Naoteru Shigekawa, Hiroyasu Ishikawa, 2004 .

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1999 .

Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition

Hiroyasu Ishikawa, Takashi Egawa, Baijun Zhang, 2004 .

GaN MESFETs on [111]Si substrate grown by MOCVD

Hiroyasu Ishikawa, Takashi Egawa, Naoyuki Nakada, 2000 .

Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD

Takashi Jimbo, Hiroyasu Ishikawa, Naoyuki Nakada, 1998 .

Current collapse-free i-GaN /AlGaN/GaN high-electron-mobility transistors with and without surface passivation

Hiroyasu Ishikawa, S. Arulkumaran, T. Egawa, 2004 .

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Takashi Jimbo, Hiroyasu Ishikawa, T. Egawa, 2002 .

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Takashi Jimbo, Tatsuo Ozeki, Hiroyasu Ishikawa, 2004 .

On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors

Lawrence Selvaraj, Hiroyasu Ishikawa, Takashi Egawa, 2006 .

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2000 .

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

Hiroyasu Ishikawa, S. Arulkumaran, T. Egawa, 2005 .

MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 2002 .

Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

Takashi Jimbo, Hiroyasu Ishikawa, T. Egawa, 2003 .

GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2002 .

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Takashi Jimbo, Tetsuo Soga, Masayoshi Umeno, 1997 .

MOCVD growth of GaN on porous silicon substrates

Yasuhiko Hayashi, Hiroyasu Ishikawa, Y. Hayashi, 2008 .

Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Takashi Jimbo, Chunlin Shao, Hiroyasu Ishikawa, 2004 .

Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1997 .

Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 2001 .

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2002 .

The infrared optical functions of AlxGa1−xN determined by reflectance spectroscopy

Takashi Jimbo, Tetsuo Soga, Hiroyasu Ishikawa, 1998 .

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Osamu Oda, Keiichiro Asai, Hiroyasu Ishikawa, 2004 .