D.C. Dumka

High performance 0.35 /spl mu/m gate-length monolithic enhancement/depletion-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrates

I. Adesida, G. Cueva, W. Hoke, 2001, IEEE Electron Device Letters.

Long-wavelength In/sub 0.53/Ga/sub 0.47/As metamorphic p-i-n photodiodes on GaAs substrates

I. Adesida, G. Cueva, J.H. Jang, 2001, IEEE Photonics Technology Letters.

Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/ over 200 GHz

I. Adesida, G. Cueva, W.E. Hoke, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates

P. Saunier, E. Beam, H. Tserng, 2003, IEEE Electron Device Letters.

Monolithic integration of InAlAs/InGaAs enhancement and depletion (E/D)-mode metamorphic HEMTs on GaAs substrate

I. Adesida, G. Cueva, R. Schwindt, 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).