Terry E. Whall

High-frequency performance of Schottky Barrier p-MOSFET devices

Jean-Pierre Raskin, G. Pailloncy, D. J. Pearman, 2008 .

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

R. B. Dunford, T. Whall, P. Phillips, 2001 .

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Mikael Östling, Bengt Gunnar Malm, Evan H. C. Parker, 2007 .

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Evan H. C. Parker, Thomas Hackbarth, Ulf Konig, 2004 .