Yves Rody

发表

Characterization of inverse SRAF for active layer trenches on 45-nm node

Jean-Damien Chapon, Jérôme Belledent, Christophe Couderc, 2007, Photomask Japan.

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Jean-Damien Chapon, Patrick Schiavone, Frank Sundermann, 2002, SPIE Advanced Lithography.

Correction of long-range effects applied to the 65-nm node

Jean-Damien Chapon, Jerome Belledent, Stanislas Baron, 2005, Photomask Japan.

Sensitivity of a variable threshold model toward process and modeling parameters

Kevin Lucas, Jérôme Belledent, Christophe Couderc, 2006, SPIE Photomask Technology.

Critical failure ORC: application to the 90-nm and 65-nm nodes

Jerome Belledent, Christophe Couderc, Frank Sundermann, 2004, SPIE Advanced Lithography.

ArF lithography for printing 100-nm gates on low-volume ASIC devices: CD budget issues related to various binary mask-making processes

Gilles L. Fanget, Yves Rody, Yorick Trouiller, 2001, SPIE Advanced Lithography.

Using the CODE technique to print complex two-dimensional structures in a 90-nm ground rule process

Patrick Schiavone, Olivier Toublan, Yves Rody, 2003, SPIE Advanced Lithography.

Critical failure ORC: Improving model accuracy through enhanced model generation

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2006 .

3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

Jérôme Belledent, Christophe Couderc, Isabelle Schanen, 2007, SPIE Photomask Technology.

Process window OPC verification: dry versus immersion lithography for the 65nm node

Jerome Belledent, Kevin Lucas, Christophe Couderc, 2006, SPIE Advanced Lithography.

Investigation of model-based physical design restrictions (Invited Paper)

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, SPIE Advanced Lithography.

Through-process window resist modelling strategies for the 65 nm node

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, SPIE Photomask Technology.

Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach

Patrick Schiavone, Olivier Toublan, Yves Rody, 2004 .

Leap ahead in mask data processing for technology nodes below 130 nm

Olivier Toublan, Yves Rody, Yorick Trouiller, 2002, SPIE Photomask Technology.

SRAF placement and sizing using inverse lithography technology

Gordon Russell, Andrew W. Moore, Amandine Borjon, 2007, SPIE Advanced Lithography.

MEV as a new constraint for lithographers in the sub-100-nm regime

Kevin D. Lucas, Jerome Belledent, Sergei V. Postnikov, 2004, SPIE Advanced Lithography.

Improving model-based OPC performance for the 65-nm node through calibration set optimization

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, SPIE Advanced Lithography.

65nm OPC and design optimization by using simple electrical transistor simulation

Jean-Damien Chapon, Jerome Belledent, Franck Arnaud, 2005, SPIE Advanced Lithography.

32-nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner

Will Conley, Jérôme Belledent, Christophe Couderc, 2007, SPIE Advanced Lithography.

OPC structures for maskshops qualification for the CMOS65nm and CMOS45nm nodes

Jérôme Belledent, Christophe Couderc, Frank Sundermann, 2007, European Mask and Lithography Conference.

Analysis of the diffraction pattern for optimal assist feature placement

Jonathan Planchot, Jerome Belledent, Christophe Couderc, 2007 .

Closing the defect printability loop: optimizing defect specifications for an established lithographic process

Kevin D. Lucas, Jerome Belledent, Christophe Couderc, 2004, SPIE Photomask Technology.

High accuracy 65nm OPC verification: full process window model vs. critical failure ORC

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2004, SPIE Advanced Lithography.

Dual layer patterning failures in complex RET processes using ORC tools and pre- or post-optical proximity correction strategy

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, Photomask Japan.

Combination multiple focal planes and PSM for sub 120 nm node with KrF lithography: study of the proximity effects

Patrick Schiavone, Yves Rody, Yorick Trouiller, 2002 .