Yorick Trouiller

发表

Characterization of inverse SRAF for active layer trenches on 45-nm node

Jean-Damien Chapon, Jérôme Belledent, Christophe Couderc, 2007, Photomask Japan.

Outliers detection by fuzzy classification method for model building

Patrick Schiavone, David Fuard, Vincent Farys, 2009, Advanced Lithography.

Extending immersion lithography to the 32-nm node

Will Conley, Jerome Belledent, Pascal Gouraud, 2007, SPIE Advanced Lithography.

ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints

Yorick Trouiller, Serdar Manakli, Pierre-Jerome Goirand, 2002, SPIE Advanced Lithography.

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Jean-Damien Chapon, Patrick Schiavone, Frank Sundermann, 2002, SPIE Advanced Lithography.

Correction of long-range effects applied to the 65-nm node

Jean-Damien Chapon, Jerome Belledent, Stanislas Baron, 2005, Photomask Japan.

Sensitivity of a variable threshold model toward process and modeling parameters

Kevin Lucas, Jérôme Belledent, Christophe Couderc, 2006, SPIE Photomask Technology.

Critical failure ORC: application to the 90-nm and 65-nm nodes

Jerome Belledent, Christophe Couderc, Frank Sundermann, 2004, SPIE Advanced Lithography.

ArF lithography for printing 100-nm gates on low-volume ASIC devices: CD budget issues related to various binary mask-making processes

Gilles L. Fanget, Yves Rody, Yorick Trouiller, 2001, SPIE Advanced Lithography.

Using the CODE technique to print complex two-dimensional structures in a 90-nm ground rule process

Patrick Schiavone, Olivier Toublan, Yves Rody, 2003, SPIE Advanced Lithography.

Implementation of silicon-validated variability analysis and optimization for standard cell libraries

Philippe Hurat, Yorick Trouiller, Florent Vautrin, 2008, SPIE Advanced Lithography.

Critical failure ORC: Improving model accuracy through enhanced model generation

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2006 .

3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

Jérôme Belledent, Christophe Couderc, Isabelle Schanen, 2007, SPIE Photomask Technology.

Convergence study for lines, spaces between standard OPC, local, and more holistic OPC

L. Perraud, E. Yesilada, Vincent Farys, 2011, Advanced Lithography.

Lithographic process optimization using process capability analysis

Yorick Trouiller, Casper A. H. Juffermans, Peter Dirksen, 2003, SPIE Advanced Lithography.

Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach x

Jerome Belledent, Yorick Trouiller, Serdar Manakli, 2003, SPIE Advanced Lithography.

Inorganic bottom ARC SiOxNy for interconnection levels on 0.18-μm technology

Yves Quere, Yorick Trouiller, Patrick Schiavone, 1998, Advanced Lithography.

Process window OPC verification: dry versus immersion lithography for the 65nm node

Jerome Belledent, Kevin Lucas, Christophe Couderc, 2006, SPIE Advanced Lithography.

Investigation of model-based physical design restrictions (Invited Paper)

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, SPIE Advanced Lithography.

Through-process window resist modelling strategies for the 65 nm node

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, SPIE Photomask Technology.

Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach

Patrick Schiavone, Olivier Toublan, Yves Rody, 2004 .

Leap ahead in mask data processing for technology nodes below 130 nm

Olivier Toublan, Yves Rody, Yorick Trouiller, 2002, SPIE Photomask Technology.

MEV as a new constraint for lithographers in the sub-100-nm regime

Kevin D. Lucas, Jerome Belledent, Sergei V. Postnikov, 2004, SPIE Advanced Lithography.

Improving model-based OPC performance for the 65-nm node through calibration set optimization

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, SPIE Advanced Lithography.

65nm OPC and design optimization by using simple electrical transistor simulation

Jean-Damien Chapon, Jerome Belledent, Franck Arnaud, 2005, SPIE Advanced Lithography.

Impact of modelisation pixel size on OPC consistency

Vincent Farys, Gurwan Kerrien, Catherine Martinelli, 2009, Advanced Lithography.

32-nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner

Will Conley, Jérôme Belledent, Christophe Couderc, 2007, SPIE Advanced Lithography.

OPC structures for maskshops qualification for the CMOS65nm and CMOS45nm nodes

Jérôme Belledent, Christophe Couderc, Frank Sundermann, 2007, European Mask and Lithography Conference.

Experimental verification of improved printability for litho-driven designs

Jerome Belledent, Laurent Le Cam, Yorick Trouiller, 2006, SPIE Advanced Lithography.

193-nm scanner characterization by SEM and electrical CD measurements

Michel Heitzmann, A. Toffoli, Laurent Pain, 2000, Advanced Lithography.

Complementary Double Exposure Technique (CODE) solutions to the two-dimensional structures of the 90nm node

Patrick Schiavone, Olivier Toublan, Yorick Trouiller, 2002, Photomask Technology.

Analysis of the diffraction pattern for optimal assist feature placement

Jonathan Planchot, Jerome Belledent, Christophe Couderc, 2007 .

Reticle enhancement verification for the 65nm and 45nm nodes

Robert Boone, Jerome Belledent, Kevin Lucas, 2006, SPIE Advanced Lithography.

Closing the defect printability loop: optimizing defect specifications for an established lithographic process

Kevin D. Lucas, Jerome Belledent, Christophe Couderc, 2004, SPIE Photomask Technology.

High accuracy 65nm OPC verification: full process window model vs. critical failure ORC

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2004, SPIE Advanced Lithography.

Dual layer patterning failures in complex RET processes using ORC tools and pre- or post-optical proximity correction strategy

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, Photomask Japan.

Fully integrated litho aware PnR design solution

Charlotte Beylier, Yorick Trouiller, Emek Yesilada, 2012, Advanced Lithography.

Combination multiple focal planes and PSM for sub 120 nm node with KrF lithography: study of the proximity effects

Patrick Schiavone, Yves Rody, Yorick Trouiller, 2002 .