Edward W. Kiewra

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction

David J. Webb, Jean-Pierre Locquet, A. Dimoulas, 2007 .

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

David J. Webb, Jean-Pierre Locquet, Chiara Marchiori, 2006 .

Enhancement-Mode Buried-Channel MOSFETs With High- Gate Dielectrics

David J. Webb, Stephen R. Forrest, Jean-Pierre Locquet, 2007 .

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Mark J. W. Rodwell, Brian Thibeault, Arthur C. Gossard, 2009 .

Electromigration in aluminum damascene lines

Terence Kane, Ronald G. Filippi, Kenneth P. Rodbell, 1999 .