J.C. Bean

Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's

T. Pearsall, J. Bean, T.P. Pearsall, 1986, IEEE Electron Device Letters.

New infrared detector on a silicon chip

S. Luryi, S. Luryi, A. Kastalsky, 1984, IEEE Transactions on Electron Devices.

Waveguide infrared photodetectors on a silicon chip

S. Luryi, H. Temkin, S. Luryi, 1986, IEEE Electron Device Letters.

High-speed polysilicon resonant-cavity photodiode with SiO/sub 2/-Si Bragg reflectors

J.C. Campbell, H. Nie, C. Schow, 1997, IEEE Photonics Technology Letters.

1.3µm Operation of GexSi1-x/Si strained-layer superlattice avalanche photodetectors

H. Temkin, N.A. Olsson, T.P. Pearsall, 1985, 1985 International Electron Devices Meeting.

Avalanche gain in GexSi1-x/Si infrared waveguide detectors

S. Luryi, H. Temkin, S. Luryi, 1986, IEEE Electron Device Letters.

Silicon molecular beam epitaxy as a VLSI processing technique

J.C. Bean, 1981, 1981 International Electron Devices Meeting.