Jonathan S. Barnard

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2003 .

Three-dimensional analysis of dislocation networks in GaN using weak-beam dark-field electron tomography

Paul A. Midgley, Jenna Tong, P. Midgley, 2006 .

On the origin of threading dislocations in GaN films

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2011 .

Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures

A. E. Belyaev, Svetlana Vitusevich, S. V. Danylyuk, 2003 .

The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2006 .