M. Shaleev

D. N. Lobanov, A. N. Yablonsky, A. Novikov, 2003, 2003 Siberian Russian Workshop on Electron Devices and Materials. Proceedings. 4th Annual (IEEE Cat. No.03EX664).

Fabrication of Strain-Relaxed Si1 − xGex/Si(001) Buffer Layers of Low Surface Roughness

O. Kuznetsov, M. Shaleev, Z. F. Krasil’nik, 2005 .

Si1−xGex/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure

O. Kuznetsov, M. Shaleev, Z. F. Krasil’nik, 2005 .

Luminescence enhancement by collective Mie-resonances

F. Heyroth, J. Schilling, V. Talalaev, 2019, Active Photonic Platforms XI.

Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1−xGex layer

D. N. Lobanov, Z. F. Krasilnik, M. Shaleev, 2006 .

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

D. N. Lobanov, Z. F. Krasilnik, O. Kuznetsov, 2011 .

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

Y. Kurokawa, N. Usami, M. Shaleev, 2018 .

Coupling of Germanium Quantum Dots with Collective Sub-radiant Modes of Silicon Nanopillar Arrays

F. Heyroth, R. Savelev, J. Schilling, 2020, ACS photonics.

Luminescence Enhancement in One-Dimensional Mie-Resonant Arrays

F. Heyroth, R. Savelev, J. Schilling, 2020, 2006.13185.

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

V. B. Shmagin, Z. F. Krasilnik, M. Shaleev, 2016 .

Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures

Y. Kurokawa, N. Usami, K. Gotoh, 2019, Japanese Journal of Applied Physics.

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

M. Shaleev, D. Yurasov, A. Novikov, 2010 .

Interaction of Ge(Si) Self-Assembled Nanoislands with Different Modes of Two-Dimensional Photonic Crystal

S. Dyakov, M. Stepikhova, A. Novikov, 2022, Nanomaterials.

Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Zh. V. Smagina, A. Dvurechenskii, S. Sergeev, 2020, Semiconductors.

Intense photoluminescence from Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

D. N. Lobanov, A. Novikov, A. Yablonskiy, 2006, 2006 International SiGe Technology and Device Meeting.

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Z. Krasilnik, A. Dubinov, P. Yunin, 2016 .

Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

D. N. Lobanov, Z. F. Krasilnik, P. Werner, 2012 .

Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells

V. S. Bagaev, V. Krivobok, S. Nikolaev, 2016 .

Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers

M. Shaleev, D. Yurasov, A. Novikov, 2009 .

Quantum Dot Emission Driven by Mie Resonances in Silicon Nanostructures.

Mihail Petrov, Frank Heyroth, Alexey Novikov, 2017, Nano letters.

Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

M. Drozdov, A. Murel’, M. Shaleev, 2011 .

Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells

V. S. Lebedev, V. S. Bagaev, V. Krivobok, 2016 .

Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

D. N. Lobanov, A. Yablonskiy, M. Shaleev, 2015 .

Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island

D. N. Lobanov, Z. F. Krasilnik, A. Yablonskiy, 2008 .

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Z. F. Krasilnik, M. Shaleev, D. Yurasov, 2016 .

Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation

Zh. V. Smagina, S. Dyakov, M. Stepikhova, 2023, Nanomaterials.

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

A. I. Bobrov, Z. F. Krasilnik, M. Drozdov, 2015 .

Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structures

M. Shaleev, D. Yurasov, A. Novikov, 2010 .

Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE

P. Yunin, M. Shaleev, E. Skorokhodov, 2021 .

Visible Emission from a Dense Biexciton Gas in SiGe/Si Quantum Wells under External Anisotropic Strain

V. S. Bagaev, V. Krivobok, S. Nikolaev, 2018 .

Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation

V. S. Bagaev, V. Krivobok, S. Nikolaev, 2018 .

Strain-Induced Intrinsic Splitting of the Biexciton Ground State in SiGe/Si Quantum Wells

V. S. Bagaev, V. Krivobok, S. Nikolaev, 2018 .

Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

Y. Kurokawa, N. Usami, A. Novikov, 2018, Japanese Journal of Applied Physics.

Negative photoconductivity of selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas in the middle-infrared range

V. Gavrilenko, E. Uskova, V. Aleshkin, 2005 .

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

P. Yunin, M. Shaleev, D. Yurasov, 2016 .

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

A. I. Bobrov, P. Yunin, M. Shaleev, 2015 .

Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Y. Kurokawa, N. Usami, M. Shaleev, 2017 .

Influence of the germanium deposition rate on the growth and Photoluminescence of Ge(Si)/Si(001) self-assembled islands

A. V. Novikov, D. N. Lobanov, A. N. Yablonsky, 2005 .

Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots

R. Opila, J. Kolodzey, S. Cloutier, 2009 .

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

A. Dubinov, P. Yunin, V. Aleshkin, 2018, Crystals.

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Z. F. Krasilnik, P. Yunin, V. Aleshkin, 2017 .

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

D. N. Lobanov, V. Alenkov, O. Buzanov, 2016, Semiconductors (Woodbury, N.Y.).

Symmetry breaking of bound states in the continuum in luminescence response of photonic crystal slabs with embedded Ge nanoislands

N. Gippius, S. Tikhodeev, M. Shaleev, 2024, Applied Physics Letters.