D. Yurasov

发表

Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

S. Sergeev, M. Stepikhova, A. Novikov, 2019, Semiconductor Science and Technology.

Photonic Bound States in the Continuum in Si Structures with the Self‐Assembled Ge Nanoislands

A. Bogdanov, Z. Krasilnik, S. Dyakov, 2020, Laser & Photonics Reviews.

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

A. N. Yablonsky, R. Zhukavin, D. Yurasov, 2016 .

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

Y. Kurokawa, N. Usami, M. Shaleev, 2018 .

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

A. I. Bobrov, Z. F. Krasilnik, M. Drozdov, 2015 .

Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures

Y. Kurokawa, N. Usami, K. Gotoh, 2019, Japanese Journal of Applied Physics.

Critical thickness for the Stranski-Krastanov transition treated with the effect of segregation

D. Yurasov, Y. Drozdov, 2008 .

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

M. Shaleev, D. Yurasov, A. Novikov, 2010 .

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

P. Yunin, M. Shaleev, D. Yurasov, 2016 .

Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics

N. Gusev, A. Yablonskiy, D. Yurasov, 2019, Semiconductors.

Influence of irradiation by swift heavy ions (SHI) on electronic magnetotransport in Sb δ-layer in silicon

P. Apel, A. Fedotov, J. Fedotova, 2021, Physica E: Low-dimensional Systems and Nanostructures.

Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon

A. Yablonskiy, D. Yurasov, A. Novikov, 2020 .

Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers

Z. F. Krasilnik, M. Drozdov, P. Yunin, 2018, Semiconductor Science and Technology.

Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask

Y. Kurokawa, N. Usami, K. Gotoh, 2020 .

Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers

M. Shaleev, D. Yurasov, A. Novikov, 2009 .

Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Z. F. Krasilnik, S. Sergeev, S. Dyakov, 2020 .

Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

M. Drozdov, D. Yurasov, A. Novikov, 2017 .

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

M. Drozdov, D. Yurasov, A. Novikov, 2013 .

Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks

Y. Kurokawa, N. Usami, K. Gotoh, 2018, Japanese Journal of Applied Physics.

Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

M. Drozdov, P. Yunin, D. Yurasov, 2015 .

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Z. F. Krasilnik, M. Shaleev, D. Yurasov, 2016 .

Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation

Zh. V. Smagina, S. Dyakov, M. Stepikhova, 2023, Nanomaterials.

Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structures

M. Shaleev, D. Yurasov, A. Novikov, 2010 .

Optical monitoring of technological parameters during molecular-beam epitaxy

V. G. Remesnik, A. V. Goryunov, A. Luk'yanov, 2012 .

Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

Y. Kurokawa, N. Usami, A. Novikov, 2018, Japanese Journal of Applied Physics.

Control of surface dip diameter in Si-based photonic nanostructures by changing growth temperature of Ge quantum dot multilayer structures and its impact on their optical properties

N. Usami, T. Tayagaki, Y. Hoshi, 2015 .

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

A. I. Bobrov, P. Yunin, M. Shaleev, 2015 .

Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Y. Kurokawa, N. Usami, M. Shaleev, 2017 .

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Z. F. Krasilnik, P. Yunin, V. Aleshkin, 2017 .

Hodographs in diode-structure diagnostics

Z. F. Krasilnik, D. Yurasov, A. Novikov, 2015 .

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

N. Gusev, A. Yablonskiy, D. Yurasov, 2018, Semiconductors.

Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

M. Drozdov, A. Antonov, D. Yurasov, 2015 .

Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium

M. Drozdov, D. Yurasov, A. Novikov, 2019, Semiconductors.