J. Zhang

Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy

Q. Gong, Yi Gu, X. Chen, 2019, Journal of Crystal Growth.

Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy

Q. Gong, Yi Gu, Yunhua Shi, 2019, Journal of Crystal Growth.

Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates

Y. Gu, G. He, X. Chen, 2018, AIP Advances.

Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants

Y. Gu, J. Wu, H. Liu, 2018, Materials Research Express.