E. A. Emel’yanov

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

V. Preobrazhenskii, A. Gutakovskii, D. S. Abramkin, 2018 .

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem AIIIBV/Si-solar energy converters on an active silicon substrate

V. Preobrazhenskii, E. A. Emel’yanov, M. Putyato, 2011 .

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells

W. Knap, F. Teppe, V. Gavrilenko, 2017 .

Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

O. Pchelyakov, V. Preobrazhenskii, E. A. Emel’yanov, 2011 .

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

V. Preobrazhenskii, A. Gutakovskii, D. S. Abramkin, 2018, Optoelectronics Instrumentation and Data Processing.