M. Putyato

V. Preobrazhenskii, M. Petrushkov, M. Putyato, 2019, 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

A. Claverie, M. Hÿtch, S. Reboh, 2013 .

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

V. Preobrazhenskii, M. D. Vilisova, M. Putyato, 2003 .

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus

N. Bert, V. Chaldyshev, V. Preobrazhenskii, 2009 .

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

Yu. G. Musikhin, N. Bert, V. Chaldyshev, 2006 .

Capacitance study of electron traps in low-temperature-grown GaAs

Yu. G. Musikhin, P. Brunkov, V. Chaldyshev, 2004 .

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 2004 .

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 2002 .

Structural transformations in low-temperature grown GaAs:Sb

A. Suvorova, V. Chaldyshev, D. Vasyukov, 2001 .

Capacitance Spectroscopy of n-i-n and p-i-p GaAs Sandwich Structures with Nanoscale As Clusters in the i-Layers

P. Brunkov, N. Bert, V. Chaldyshev, 2001 .

The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy

V. Preobrazhenskii, M. D. Vilisova, M. Putyato, 2000 .

Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters

A. Suvorova, P. Brunkov, N. Bert, 2000 .

Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

A. Suvorova, P. Werner, N. Bert, 2000 .

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

V. Chaldyshev, V. Preobrazhenskii, M. Putyato, 1999 .

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

Yu. G. Musikhin, N. Bert, V. Chaldyshev, 1999 .

ENHANCED PRECIPITATION OF EXCESS AS ON ANTIMONY DELTA LAYERS IN LOW-TEMPERATURE-GROWN GAAS

A. Suvorova, P. Werner, N. Bert, 1999 .

Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature

Yu. G. Musikhin, P. Werner, N. Faleev, 1999 .

Bistability of charge accumulated in low-temperature-grown GaAs

A. Suvorova, N. Bert, V. Chaldyshev, 1998 .

Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters

A. Suvorova, P. Brunkov, N. Bert, 1998 .

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

Yu. G. Musikhin, P. Werner, N. Bert, 1998 .

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 1998 .

LT GaAs delta-doped with In: enhanced As excess, In-Ga intermixing, As cluster array ordering

Yu. G. Musikhin, A. Suvorova, P. Werner, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

N. Faleev, V. Chaldyshev, V. Preobrazhenskii, 1998 .

Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

M. A. Putyato, Yu. G. Musikhin, P. Werner, 1997, IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat..

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping

Yu. G. Musikhin, N. Faleev, N. Bert, 1997 .

Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

N. Faleev, V. Chaldyshev, V. Preobrazhenskii, 1996 .

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

O. Pchelyakov, V. Preobrazhenskii, M. Putyato, 1999 .

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

V. Chaldyshev, V. Preobrazhenskii, M. Putyato, 2019, physica status solidi (b).

Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles

M. A. Putyato, M. Bayer, T. Vartanyan, 2019, Optics and Spectroscopy.

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

V. Gavrilenko, S. Morozov, A. Dubinov, 2020 .

Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

A. K. Gutakovsky, V. Preobrazhenskii, M. Petrushkov, 2016 .

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem AIIIBV/Si-solar energy converters on an active silicon substrate

V. Preobrazhenskii, E. A. Emel’yanov, M. Putyato, 2011 .

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

V. Nevedomskiy, N. Bert, V. Chaldyshev, 2013 .

Electron microscopy of GaAs Structures with InAs and as quantum dots

N. Bert, V. Chaldyshev, V. Preobrazhenskii, 2011 .

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells

W. Knap, F. Teppe, V. Gavrilenko, 2017 .

Local stresses induced by nanoscale As-Sb clusters in GaAs matrix

A. Claverie, A. Suvorova, P. Werner, 2002 .

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

V. Ulin, D. Kirilenko, V. Chaldyshev, 2022, Materials.

Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials

N. Bert, V. Nevedomsky, V. Chaldyshev, 2015 .

Enhanced As-Sb intermixing of GaSb monolayer superlattices in low- temperature grown GaAs

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 2001 .

Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix

V. Nevedomskiy, N. Bert, V. Chaldyshev, 2014 .

Absorption and photoluminescence of epitaxial quantum dots in the near field of silver nanostructures

T. Vartanyan, I. Gladskikh, V. Chaldyshev, 2017 .

Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions

V. Chaldyshev, V. Preobrazhenskii, M. Putyato, 2012 .

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

A. Claverie, P. Werner, N. Bert, 2007 .

Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 2009 .

In–Ga intermixing in low-temperature grown GaAs delta doped with In

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 1999 .

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

Yu. G. Musikhin, P. Werner, N. Faleev, 1999 .

Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

N. Bert, V. Chaldyshev, V. Preobrazhenskii, 1997 .

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

V. Chaldyshev, V. Preobrazhenskii, M. Putyato, 2016 .

Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n-and p-type matrices

A. Suvorova, P. Brunkov, N. Bert, 2000, 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

V. Atuchin, O. Komkov, A. Bakarov, 2022, Nanomaterials.

Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

Yu. G. Musikhin, A. Suvorova, N. Bert, 1998 .

Some aspects of diffracted waves formation at RHEED on a reconstructed crystal face

M. Putyato, A. Vasev, V. Preobrazhenskii, 2017, 1712.05585.

The solid solutions (AIII) PxAs1−x: Mechanism of formation the V group sublattise composition

V. Preobrazhenskii, M. Putyato, B. Semyagin, 2014, 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).

Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice

V. Preobrazhenskii, M. Putyato, B. Semyagin, 2013, 2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices.

Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots

A. Gutakovskii, D. S. Abramkin, M. Putyato, 2014 .

Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

A. Bakulin, O. Tereshchenko, I. Maurin, 2015 .

Formation of low-dimensional structures in the InSb/AlAs heterosystem

A. Bakarov, A. Gutakovskii, D. S. Abramkin, 2017 .

Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing

V. Seleznev, V. Preobrazhenskii, M. Putyato, 2008 .

Defect formation in LT MBE InGaAs and GaAs

L. Anisimova, A. Gutakovskii, M. Putyato, 2004 .

Properties of Quantum Wells and Their Application in Femtosecond Lasers Operating in Near IR Range with Sub GHz Pulse Repetition Rate

S. Kuznetsov, V. Preobrazhenskii, N. Rubtsova, 2020, Optoelectronics, Instrumentation and Data Processing.

Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion

V. Preobrazhenskii, S. V. Egorov, M. Putyato, 2016, 1605.08539.

Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

M. Putyato, A. Vasev, V. Preobrazhenskii, 2018, Surface Science.

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

M. Putyato, A. Vasev, V. Preobrazhenskii, 2018, Surface Science.

A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth

V. Preobrazhenskii, M. Putyato, B. Semyagin, 2009 .

Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

O. Pchelyakov, V. Preobrazhenskii, E. A. Emel’yanov, 2011 .

PHYSICAL AND ENGINEERING FUNDAMENTALS OF MICROELECTRONICS AND OPTOELECTRONICS Formation of Type-II InAs/GaSb Strained Short-Period Superlattices for IR Photodetectors by Molecular Beam Epitaxy

O. Pchelyakov, V. Preobrazhenskii, M. Putyato, 2011 .

Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs

V. Preobrazhenskii, M. Putyato, B. Semyagin, 2002 .

Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

D. S. Abramkin, M. Petrushkov, M. Putyato, 2023, Nanomaterials.

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

V. Preobrazhenskii, A. Gutakovskii, D. S. Abramkin, 2019, Semiconductors.

High quality relaxed GaAs quantum dots in GaP matrix

A. Gutakovskii, D. S. Abramkin, M. Putyato, 2010 .

Surface structure transitions on (0 0 1) GaAs during MBE

O. Pchelyakov, V. Preobrazhenskii, M. Putyato, 1999 .

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

D. S. Abramkin, M. Petrushkov, M. Putyato, 2021, Semiconductors.

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates

O. Pchelyakov, N. Haiqiao, V. Seleznev, 2014 .

FUNDAMENTAL PROBLEMS OF EPITAXY OF SEMICONDUCTOR NANOHETEROSTRUCTURES Heteroepitaxy of AB Films on Vicinal Si(001) Substrates

O. Pchelyakov, V. Seleznev, V. Preobrazhenskii, 2014 .

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

V. Preobrazhenskii, A. Gutakovskii, D. S. Abramkin, 2018, Optoelectronics Instrumentation and Data Processing.

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

V. Chaldyshev, V. Preobrazhenskii, M. Putyato, 2018, Semiconductors.

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Xiaolei Zhang, O. Pchelyakov, Lei Zhang, 2014 .

Formation of complexes of quantum dots InAs and nanoclusters as in matrix GaAs by molecular beam epitaxy

N. Bert, V. Chaldyshev, V. Preobrazhenskii, 2011, 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings.