I. Loshkarev

发表

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

V. Preobrazhenskii, A. Gutakovskii, D. S. Abramkin, 2018 .

X-ray equipment for laboratory and synchrotron studies of thin-film crystalline structures

I. Loshkarev, A. Vasilenko, E. M. Trukhanov, 2014, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

M. Petrushkov, M. Putyato, B. Semyagin, 2019, Semiconductors.

Morphology, Structure, and Optical Properties of SnO (x) Films

I. Korolkov, A. Nikiforov, T. Gavrilova, 2020, Russian Physics Journal.

Growth of Epitaxial SiSn Films with High Sn Content for IR Converters

A. Nikiforov, A. Kokhanenko, A. Kokhanenko, 2017 .

Strained Nanoscale GeSiSn Layers Grown on Silicon for Optoelectronic

O. Pchelyakov, A. Nikiforov, I. Loshkarev, 2016 .

Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate

A. Nikiforov, O. Komkov, A. Bloshkin, 2022, Applied Surface Science.

Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

A. K. Gutakovsky, V. Preobrazhenskii, M. Petrushkov, 2016 .

Dislocations in MCT heteroepitaxial structures on (013) substrates and possibilities of dislocation density reducing

I. Sabinina, M. Yakushev, I. Loshkarev, 2016 .

The low thermal gradient Czochralski crystal growth and microstructural properties of a Pb2MoO5(20−1) cleaved surface

N. V. Pervukhina, N. Kuratieva, V. Atuchin, 2015 .

Crystal growth of Bi 2 Te 3 and noble cleaved (0001) surface properties

V. Atuchin, I. Korolkov, K. Kokh, 2016 .

Effect of long-range stresses on the structure of semiconductor heterosystems

I. Loshkarev, E. M. Trukhanov, A. Kolesnikov, 2014, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Long-range stresses generated by misfit dislocations in epitaxial films

I. Loshkarev, E. M. Trukhanov, A. Kolesnikov, 2015 .

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

V. Atuchin, O. Komkov, A. Bakarov, 2022, Nanomaterials.

Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

K. Romanyuk, A. Gutakovskii, I. Loshkarev, 2012 .

Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

I. Korolkov, V. Volodin, I. Azarov, 2020 .

Morphology, Structure, and Optical Properties of SnO (x) Films

I. Korolkov, A. Nikiforov, T. Gavrilova, 2020, Russian Physics Journal.

Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films

I. Korolkov, A. Nikiforov, T. Gavrilova, 2020, Materials Research Express.

Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds

V. Volodin, A. Nikiforov, O. Komkov, 2021, Applied Surface Science.

Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

O. Komkov, I. Loshkarev, D. Gulyaev, 2021, Russian Physics Journal.

Studying the morphology, structure and band diagram of thin GeSiSn films and their mid-infrared photoresponse

A. Nikiforov, V. Novikov, I. Loshkarev, 2018, Semiconductor Science and Technology.

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

A. Nikiforov, A. Gutakovskii, I. Loshkarev, 2018, Nanotechnology.

Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

O. Pchelyakov, A. Nikiforov, M. Y. Esin, 2018 .

Long-range stresses generated by misfit dislocations in epitaxial films

I. Loshkarev, E. M. Trukhanov, A. Kolesnikov, 2015, Russian Microelectronics.

Optimal and nonoptimal misfit stress relaxation in a semiconductor heterosystem

I. Loshkarev, A. Vasilenko, E. M. Trukhanov, 2014 .

Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands

O. Pchelyakov, A. Nikiforov, I. Loshkarev, 2018 .

Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates

I. Sabinina, M. Yakushev, I. Loshkarev, 2015 .

Analysis of the Stress Relieving Process in a Semiconductor Heterosystem with a (013) Interface

I. Loshkarev, A. Vasilenko, E. M. Trukhanov, 2018 .

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

V. Preobrazhenskii, A. Gutakovskii, D. S. Abramkin, 2018, Optoelectronics Instrumentation and Data Processing.

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures

A. Nikiforov, I. Loshkarev, V. Timofeev, 2017 .

Role of long-range shear stresses in the plastic deformation of epitaxial films

I. Loshkarev, E. M. Trukhanov, A. Kolesnikov, 2015 .

Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation

T. Malin, K. Zhuravlev, I. Loshkarev, 2020, Optoelectronics, Instrumentation and Data Processing.

Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

A. Kozhukhov, V. Vdovin, T. Malin, 2022, Journal of Crystal Growth.